Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(3): 038502    DOI: 10.1088/1674-1056/23/3/038502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚)
School of Microelectronics, Xidian University, Xi’an 710071, China
Abstract  A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson’s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.
Keywords:  surrounding-gate MOSFET      dual-material gate      junctionless transistor      analytical model  
Received:  12 August 2013      Revised:  05 September 2013      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  02.60.Cb (Numerical simulation; solution of equations)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204092 and 61076101) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. K50511250001).
Corresponding Authors:  Li Cong     E-mail:  cong.li@mail.xidian.edu.cn

Cite this article: 

Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs 2014 Chin. Phys. B 23 038502

[1] Iniguez B, Jimenez D, Roig J, Hamid H A, Marsal L F and Pallares J 2005 IEEE Trans. Electron Devices 52 1868-73
[2] Li C, Zhuang Y Q, Zhang L and Bao J L 2012 Chin. Phys. B 21 048501
[3] Li Z C 2008 Chin. Phys. B 17 4312
[4] Jin X S, Liu X, Hyuck-In K and Jong-Ho L 2013 Chin. Phys. Lett. 30 038502
[5] Lee C W, Borne A, Ferain I, Afzalian A, Yan R, Dehdashti A N, Razavi P and Colinge J P 2010 IEEE Trans. Electron Devices 57 620
[6] Jin X, Liu X, Wu M, Chuai R, Lee J H and Lee J H 2012 J. Phys. D: Appl. Phys. 45 375102
[7] Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher A M, McCarthy B and Murphy R 2010 Nature 5 225
[8] Wang T, Lou L and Lee C 2013 IEEE Electron Devices Lett. 34 478
[9] Chiang T K 2012 IEEE Trans. Electron Devices 59 3127
[10] Jin X, Liu X, Wu M, Chuai R, Lee J H and Lee J H 2013 Semicond. Sci. Technol. 28 015002
[11] Lee C W, Ferain I, Afzalian A, Yan R, Akhavan N D, Razavi P and Colinge J P 2010 Solid-State Electron. 54 97
[12] Doria R T, Pavanello M A, Trevisoli R D, de Souza M, Lee C W, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Kranti A and Colinge J P 2011 IEEE Trans. Electron Devices 58 2511
[13] Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J and Chan M 2012 IEEE Trans. Electron Devices 59 1829
[14] Sorée B, Magnus W and Pourtois G 2008 J. Comput. Electron. 7 380
[15] Gnani E, Gnudi A, Reggiani S and Baccarani G 2011 IEEE Trans. Electron Devices 58 2903
[16] Duarte J P, Choi S J, Moon D I and Choi Y K 2012 IEEE Electron Devices Lett. 33 155
[17] Gnudi A, Reggiani S, Gnani E and Baccarani G 2012 IEEE Electron Devices Lett. 33 336
[18] Li C, Zhuang Y, Zhang L and Jin G 2014 Chin. Phys. B 23 018501
[19] Liang X and Taur Y 2004 IEEE Trans. Electron Devices 51 1385
[20] Yu B, Yuan Y, Song J and Taur Y 2009 IEEE Trans. Electron Devices 56 2357
[21] Omura Y, Horiguchi S, Tabe M and Kishi K 1993 IEEE Electron Devices Lett. 14 569
[1] A simple analytical model of laser direct-drive thin shell target implosion
Bo Yu(余波), Tianxuan Huang(黄天晅), Li Yao(姚立), Chuankui Sun(孙传奎), Wanli Shang(尚万里), Peng Wang(王鹏), Xiaoshi Peng(彭晓世), Qi Tang(唐琦), Zifeng Song(宋仔峰), Wei Jiang(蒋炜), Zhongjing Chen(陈忠靖), Yudong Pu(蒲昱东), Ji Yan(晏骥), Yunsong Dong(董云松), Jiamin Yang(杨家敏), Yongkun Ding(丁永坤), and Jian Zheng(郑坚). Chin. Phys. B, 2022, 31(4): 045204.
[2] Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥). Chin. Phys. B, 2020, 29(4): 047102.
[3] Analytical model of tilted driver-pickup coils for eddy current nondestructive evaluation
Bing-Hua Cao(曹丙花), Chao Li(李超), Meng-Bao Fan(范孟豹), Bo Ye(叶波), Gui-Yun Tian(田贵云). Chin. Phys. B, 2018, 27(3): 030301.
[4] Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波). Chin. Phys. B, 2016, 25(2): 027305.
[5] Semi-analytical model for quasi-double-layer surface electrode ion traps
Jian Zhang(张见), Shuming Chen(陈书明), Yaohua Wang(王耀华). Chin. Phys. B, 2016, 25(11): 113701.
[6] A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(8): 087305.
[7] A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure
Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰). Chin. Phys. B, 2014, 23(12): 124215.
[8] Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚). Chin. Phys. B, 2014, 23(1): 018501.
[9] Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-$\kappa$ gate dielectric
Li Cong(李聪), Zhuang Yi-Qi(庄奕琪), Zhang Li(张丽), and Bao Jun-Lin(包军林) . Chin. Phys. B, 2012, 21(4): 048501.
No Suggested Reading articles found!