Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

doi:10.1088/1674-1056/acc8c0

Abstract Dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work. It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated, with two-stage curves shown. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4% with frequency increasing to 10 MHz, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%. Finally, the investigation of two-stage (heating and cooling) process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.

Keywords: self-heating effect (SHE) silicon-on-insulator (SOI) MOSFETs thermal transient response workload

Received: 10 January 2023
Revised: 13 March 2023
Accepted manuscript online: 30 March 2023

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 52161160330 and U2230402).

Corresponding Authors: Chuan-Bin Zeng
E-mail: chbzeng@ime.ac.cn

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Yi-Fan Li(李逸帆), Tao Ni(倪涛), Xiao-Jing Li(李晓静), Juan-Juan Wang(王娟娟), Lin-Chun Gao(高林春), Jian-Hui Bu(卜建辉), Duo-Li Li(李多力), Xiao-Wu Cai(蔡小五), Li-Da Xu(许立达), Xue-Qin Li(李雪勤), Run-Jian Wang(王润坚), Chuan-Bin Zeng(曾传滨), Bo Li(李博), Fa-Zhan Zhao(赵发展), Jia-Jun Luo(罗家俊), and Zheng-Sheng Han(韩郑生) Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process 2023 Chin. Phys. B 32 098501

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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

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