| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology |
| Yan-Hui Zhang(张彦辉)1, Jie Wei(魏杰)1, Chao Yin(尹超)1, Qiao Tan(谭桥)1, Jian-Ping Liu(刘建平)1, Peng-Cheng Li(李鹏程)1, Xiao-Rong Luo(罗小蓉)1,2 |
1. State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China |
|
|
|
|
Abstract A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD>0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V.
|
Received: 10 August 2015
Revised: 12 October 2015
Accepted manuscript online:
|
|
PACS:
|
73.40.Ty
|
(Semiconductor-insulator-semiconductor structures)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
85.30.Tv
|
(Field effect devices)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079). |
Corresponding Authors:
Xiao-Rong Luo
E-mail: xrluo@uestc.edu.cn
|
Cite this article:
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉) A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology 2016 Chin. Phys. B 25 027306
|
| [1] |
Ludikhuize A W 2001 Proceedings of the 31 st European, IEEE Solid-State Device Research Conference, September 11-13, 2001, p. 35
|
| [2] |
Iqbal M M, Udrea F and Napoli E 2009 IEEE Proceedings of the 21 st International Symposium on Power Semiconductor Devices and ICs, June 14-18, 2009, Barcelona, Spain, p. 247
|
| [3] |
Ming Q, Li Y F, Zhou X, Li Z J and Zhang B 2014 IEEE Electron Dev. Lett. 35 774
|
| [4] |
Chen X B U S Patent 5216275 [1993-06-01]
|
| [5] |
Chen Y, Liang Y C, Samudra G S, Xin Y, Buddharaju K D and H H Feng 2008 IEEE Trans. Electron Dev. 55 211
|
| [6] |
Luo X, Wei J, Shi X, Zhou K, Tian R, Zhang B and Li Z 2014 IEEE Trans. Electron Dev. 61 4304
|
| [7] |
Merchant S, Arnold E, Baumgart H, Mukherjee S, Pein H and Pinker R 1991 IEEE Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, April 22-24, 1991, Maryland, USA, p. 31
|
| [8] |
Luo X R, Wei J, Shi X L, Zhou K, Tian R C, Zhang B and Li Z J 2014 IEEE Trans. Electron. Dev. 61 4304
|
| [9] |
Udrea F, Trajkovic T, Lee C, Garner D, Yuan X, Joyce J, Udugampola N, Bonnet G, Coulson D, Jacques R, Izmajlowicz M, van der Duijn Schouten N, Ansari Z, Moyse P and Amaratunga G A J 2005 IEEE Proceedings of the 17th International Symposium on Power Semiconductor Devices and ICs, Santa Barbara, USA, p. 267
|
| [10] |
Leung Y K, Amit K P, Kenneth E G, James D P and Wong S S 1997 IEEE Electron Dev. Lett. 18 414
|
| [11] |
Zhang S, Sin J K O, Lai T M L and Ko P K 1999 IEEE Trans. Electron Dev. 46 1036
|
| [12] |
T Trajkovic, F Udrea, C Lee, N Udugampola, V Pathirana, A Mihaila and G A J Amaratunga 2008 IEEE Proceedings of the 20th International Symposium on Power Semiconductor Devices and ICs, May 18-22, 2008, Oralando, USA, p. 327
|
| [13] |
Lyu X J and Chen X B 2013 IEEE Trans. Electron Dev. 60 3821
|
| [14] |
Chen X B and Sin J K O 2001 IEEE Trans. Electron Dev. 48 344
|
| [15] |
K P Gan, Yung C Liang, Ganesh S Samudra, S M Xu and Liu Y 2001 Power Electronics Specialists Conference, June 17-21, 2001, Vancouver, Canada, p. 2156
|
| [16] |
Vestling L, Edholm B, Olsson J, Tiensuu S and Soderbarg A 1997 Proceedings of the International Symposium on Power Semiconductor Devices & IC's, May 26-29, 1997, Weimar, Germany, p. 45
|
| [17] |
Wei J, Luo X, Zhang Y, Li P, Zhou K, Li Z and Zhang B 2015 Proceedings of the International Symposium on Power Semiconductor Devices and IC's, May 10-14, 2015, Hong Kong, China, p. 185
|
| [18] |
Luo Y C, Luo X R, Hu G Y, Fan Y H, Li P C, Wei J, Tan Q and Zhang B 2014 Chin. Phys. B 23 077306
|
| [19] |
Z Lin and X B Chen 2015 IEEE Electron Dev. Lett. 36 588
|
| [20] |
Matsumura A, Sasaki T and Kitahara K US patent 0170940
|
|
[2003].
|
| [21] |
Udrea F, Trajkovicand T and Amaratunga G A J 2004 Proceedings of IEEE Int. Electron Devices, December 13-15, 2004, San Francisco, USA, p. 451
|
| [22] |
Udrea F and Amaratunga G US patent 6703684
|
|
[2004]
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
