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Chin. Phys. B, 2021, Vol. 30(5): 058502    DOI: 10.1088/1674-1056/abd740

Improved 4H-SiC UMOSFET with super-junction shield region

Pei Shen(沈培)1, Ying Wang(王颖)1,†, Xing-Ji Li(李兴冀)2, Jian-Qun Yang(杨剑群)2, Cheng-Hao Yu(于成浩)1, and Fei Cao(曹菲)1
1 Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
2 National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, China
Abstract  This article investigates an improved 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance ($R_{\rm on,sp}$). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field ($E$-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that $R_{\rm on,sp }$ of the modified structure, and breakdown voltage ($V_{\rm BR}$) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit (${\rm FOM}=V^{2}_{\rm BR}/R_{\rm on,sp}$) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge ($Q_{\rm gd}$) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the $V_{\rm BR}$ of the device without degradation of dynamic performance.
Keywords:  breakdown voltage      specific on-resistance      silicon carbide      switching energy loss      super-junction (SJ)      trench gate MOSFET  
Received:  13 September 2020      Revised:  16 November 2020      Accepted manuscript online:  30 December 2020
PACS:  85.30.-z (Semiconductor devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045), the Youth Foundation of the Education Department of Jiangxi Province, China (Grant No. GJJ191154), and the Youth Foundation of Ping Xiang University, China (Grant No. 2018D0230).
Corresponding Authors:  Ying Wang     E-mail:

Cite this article: 

Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) Improved 4H-SiC UMOSFET with super-junction shield region 2021 Chin. Phys. B 30 058502

[1] Matsuura H, Nagasawa H, Yagi K and Kawahara T 2004 J. Appl. Phys. 96 7346
[2] Yu L C and Sheng K 2006 Solid-State Electron. 66 1062
[3] Jiang H, Wei J, Dai X, Ke M, Deviny I and Mawby P 2016 IEEE Electron Dev. Lett. 37 1324
[4] Zhou X, Yue R, Zhang J, Dai G, Li J and Wang Y 2017 IEEE Trans. Electron Dev. 64 4568
[5] Tian K, Hallen A, Qi J, Ma S, Fei X, Zhang A and Liu W 2019 IEEE Transa. Electron Dev. 66 1
[6] Kagawa Y, et al. 2014 Mater. Sci. Forum 778-780 919
[7] Tan J, Cooper J A and Melloch M R 1998 IEEE Electron Dev. Lett. 19 487
[8] Li Y, Cooper J A and Capano M A 2002 IEEE Trans. Electron Dev. 49 972
[9] Cooper J A (U.S. Patent) 6 180 958 [2001-01-30]
[10] Kang H and Udrea F 2019 IEEE Trans. Electron Dev. 66 5254
[11] Iwamuro N 2019 International Conference on Electronics Packaging, April 17-20, 2019, Niigata, Japan, p. 260
[12] Vudumula P, Kotamraju S 2019 IEEE Trans. Electron Dev. 66 1402
[13] Orouji A A, Jozi M and Fathipour M 2015 Mater. Sci. Semicond. Process. 39 711
[14] Deng S, Hossain Z and Taniguchi T 2017 IEEE Trans. Electron Dev. 64 735
[15] He Q Y, Luo X R, Liao T, Wei J, Deng G Q, Fang J and Yang F 2018 Superlattices and Microstructures 125 58
[16] Kobayashi Y, Kyogoku S, Morimoto T, Kumazawa T, Yamashiro Y, Takei M and Harada S 2019 Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs, May 19-23, 2019, Shanghai, China, p. 19
[17] Kosugi R, Ji S, Mochizuki K, Adachi K, Segawa S, Kawada Y, Yonezawa Y and Okumura H 2019 Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs, May 19-23, 2019, Shanghai, China, p. 19
[18] Harada S, Kobayashi Y, Kyogoku S, Morimoto T, Tanaka T, Takei M and Okumura H 2018 IEEE International Electron Devices Meeting, Novermber 29-December 07, 2018, San Francisco, USA, p. 1
[19] Goh J and Kim K 2020 International Conference on Electronics, Information, and Communication, July 17-19, 2020, Beijing, China, p. 19
[20] Vudumula P, Kiranmayee S and Kotamraju S 2019 Semicond. Sci. Technol. 34 1
[21] Kosugi R, SY J, Mochizuki K, Kouketsu H, Kawada Y, Fujisawa H, Kojima K, Yonezawa Y and Okumura H 2017 Jpn. J. Appl. Phys. 56 04CR05
[22] Dai T, et al. 2017 Mater. Sci. Forum 897 371
[23] Li J J, Cheng X H, Wang Q, Zheng L, Shen L Y, Li X C, Zhang D L, Zhu H Y and Shen D S 2017 Mater. Sci. Semicond. Process. 67 104
[24] Elham A, Orouji A A 2018 J. Comput. Electron. 17 1584
[25] Matsunaga S, Sawada M, Sugi A, Takagiwa K and Fujishima N 2006 International Symposium on Power Semiconductor Devices and IC's, June 04-08, 2006, Naples, Italy, p. 1
[26] Hueting R J E, Hijzen E A, Heringa A, Ludikhuize A W and Z and M A A 2004 IEEE Trans. Electron Dev. 51 1323
[27] Zhang M, Wei J, Jiang H, Chen K J and Cheng C H 2017 IEEE Trans. Dev. Mater. Reliab. 17 432
[28] Wei J, Zhang M, Jiang H, Wang H and Chen K J 2017 IEEE Trans. Electron Dev. 64 2592
[29] Udrea F, Deboy G and Fujihira T 2017 IEEE Trans. Electron Dev. 64 713
[30] Castro I, Roig J, Gelagaev R, Vlachakis B, Bauwens F, Lamar D. G and Driesen J 2016 IEEE Trans. Power Electron. 31 2485
[31] Zhou X, Yue R, Zhang J, Dai G, Li J and Wang Y 2017 IEEE Trans. Electron Dev. 64 4568
[32] Wang Y, Jiao W L, Hu H F, Liu Y T and Gao J 2013 IEEE Trans. Electron Dev. 60 2084
[33] Wang H, Napoli E and Udrea F 2009 IEEE Trans. Electron Dev. 56 3175
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