Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)
Liu Hong-Xia (刘红侠)† and Hao Yue (郝跃)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract Hot carrier injection (HCI) at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.
Received: 25 October 2006
Revised: 18 January 2007
Accepted manuscript online:
PACS:
85.30.Tv
(Field effect devices)
Fund: Project supported
by the National Natural Science Foundation of China (Grant No
60206006), the Program for New Century Excellent Talents of Ministry
of Education of China (Grant No 681231366), the National Defense
Pre-Research Foundation of China (Grant N
Cite this article:
Liu Hong-Xia (刘红侠) and Hao Yue (郝跃) Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs) 2007 Chinese Physics 16 2111
Recovery of PMOSFET NBTI under different conditions Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(9): 097304.
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