Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO

doi:10.1088/1674-1056/26/12/127701

Abstract Near-interface oxide traps (NIOTs) in 4H-SiC metal-oxide-semiconductor (MOS) structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.76×10¹¹ cm^-2 and 0.47×10¹¹ cm^-2 for the N₂ post oxidation annealing (POA) sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.79×10¹¹ cm^-2 and 9.44×10¹¹ cm^-2 for the NO POA sample and N₂ POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses (CVS) reveal that electrons captured by those “slow” NIOTs and bulk oxide traps (BOTs) are hardly emitted by the constant voltage stress.

Keywords: 4H-SiC MOS Near-Interface Oxide traps

Received: 14 June 2017
Revised: 22 August 2017
Accepted manuscript online:

PACS:	77.22.Jp	(Dielectric breakdown and space-charge effects)
	73.20.-r	(Electron states at surfaces and interfaces)
	77.84.Lf	(Composite materials)

Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2015CB759600), the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2017JM6003), and the National Natural Science Foundation of China (Grant Nos. 61774117 61404098 and 61274079).

Corresponding Authors: Qing-Wen Song, Qing-Wen Song
E-mail: qwsong@xidian.edu.cn;xytang@mail.xidian.edu.cn

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Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门) Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO 2017 Chin. Phys. B 26 127701

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Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO

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