Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition

doi:10.1088/1674-1056/27/1/018101

Abstract The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS₂ monolayer. The obtained monolayer MoS₂ films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS₂ monolayer was largely homogeneous.

Keywords: MoS₂ seed graphene quantum dots (GQDs) continuous film

Received: 18 February 2017
Revised: 27 September 2017
Accepted manuscript online:

PACS:	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	81.07.Ta	(Quantum dots)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), the National Natural Science Foundation of China (Grant Nos. 61527817, 61335006, and 61378073), and the Overseas Expertise Introduction Center for Discipline Innovation, 111 Center, China.

Corresponding Authors: Dawei He
E-mail: dwhe@bjtu.edu.cn

Cite this article:

Lu Zhang(张璐), Yongsheng Wang(王永生), Yanfang Dong(董艳芳), Xuan Zhao(赵宣), Chen Fu(付晨), Dawei He(何大伟) Facilitative effect of graphene quantum dots in MoS₂ growth process by chemical vapor deposition 2018 Chin. Phys. B 27 018101

[1]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147
[2]	Wang H, Yu L, Lee Y H, Fang W, Hsu A, Herring P, Chin M, Dubey M, Li L J, Kong J and Palacios T 2013 IEDM Technical Digest 48 4.6.1-4.6.4
[3]	Hsu A, Wang H, Shin Y C, Mailly B, Zhang X, Yu L L, Shi Y M, Lee Y H, Dubey M and Kim K K 2013 Proc. IEEE 101 1638
[4]	Lee Y H, Zhang X Q, Zhang W J, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T W, Chang C S, Li L J and Lin T W 2012 Adv. Mater. 24 2320
[5]	Najmaei S, Liu Z, Zhou W, Zou X L, Shi G, Lei S D, Yakobson B I, Idrobo J C, Ajayan P M and Lou J 2013 Nat. Mater. 12 754
[6]	Van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R, Muller D A and Hone J C 2013 Nat. Mater. 12 554
[7]	Roy K, Padmanabhan M, Goswami S, Sai T P, Ramalingam G, Raghavan S and Ghosh A 2013 Nat. Nanotechnol. 8 826
[8]	Mertens J, Shi Y M, Molina-Sánchez A, Wirtz L, Yang H Y and Baumberg J J 2014 Appl. Phys. Lett. 104 191105
[9]	Ling X, Lee Y H, Lin Y X, Fang W J, Yu L L, Dresselhaus M S and Kong J 2014 Nano Lett. 14 464
[10]	Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W and Li L J 2012 Nanoscale 4 6637
[11]	Dong Y Q, Shao J W, Chen C Q, Li H, Wang R X, Chi Y W, Lin X M and Chen G N 2012 Carbon 50 4738
[12]	Qu D, Zheng M, Zhang L G, Zhao H F, Xie Z G, Jing X B, Haddad R E, Fan H Y and Sun Z C 2015 Sci. Rep. 4 5294
[13]	Wang S J, Chen Z G, Cole I and Li Q 2015 Carbon 82 304
[14]	Molina-Sánchez A and Wirtz L 2011 Phys. Rev. B 84 155413
[15]	Aizenberg J, Black A J and Whitesides G M 1999 J. Am. Chem. Soc. 121 4500
[16]	Jeon J, Jang S K, Jeon S M, Yoo G, Park G H and Lee S 2015 IEEE T. Nanotechnol. 14 238
[17]	Ji Q Q, Zhang Y F, Gao T, Zhang Y, Ma D L, Liu M X, Chen Y B, Qiao X F, Tan P H, Kan M, Feng J, Sun Q and Liu Z F 2013 Nano Lett. 13 3870
[18]	Splendiani A, Sun L, Zhang Y B, Li T S, Kim J, Chim C Y, Galli G and Wang F 2010 Nano Lett. 10 1271
[19]	Lee C W, Weng C H, Wei L, Chen Y, Chan-Park M B, Tsai C H, Leou K C, Poa C H P, Wang J L and Li L J 2008 J. Phys. Chem. C 112 12089
[20]	Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 474

[1]	Resonant perfect absorption of molybdenum disulfide beyond the bandgap Hao Yu(于昊), Ying Xie(谢颖), Jiahui Wei(魏佳辉), Peiqing Zhang(张培晴),Zhiying Cui(崔志英), and Haohai Yu(于浩海). Chin. Phys. B, 2023, 32(4): 048101.
[2]	A three-band perfect absorber based on a parallelogram metamaterial slab with monolayer MoS₂ Wen-Jing Zhang(张雯婧), Qing-Song Liu(刘青松), Bo Cheng(程波), Ming-Hao Chao(晁明豪),Yun Xu(徐云), and Guo-Feng Song(宋国峰). Chin. Phys. B, 2023, 32(3): 034211.
[3]	MoS₂/Si tunnel diodes based on comprehensive transfer technique Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾). Chin. Phys. B, 2023, 32(1): 018501.
[4]	Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂ Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[5]	Precisely controlling the twist angle of epitaxial MoS₂/graphene heterostructure by AFM tip manipulation Jiahao Yuan(袁嘉浩), Mengzhou Liao(廖梦舟), Zhiheng Huang(黄智恒), Jinpeng Tian(田金朋), Yanbang Chu(褚衍邦), Luojun Du(杜罗军), Wei Yang(杨威), Dongxia Shi(时东霞), Rong Yang(杨蓉), and Guangyu Zhang(张广宇). Chin. Phys. B, 2022, 31(8): 087302.
[6]	Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Chin. Phys. B, 2022, 31(8): 087803.
[7]	Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2022, 31(8): 088105.
[8]	Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS₂-based p-n junction Fenghua Qi(戚凤华) and Xingfei Zhou(周兴飞). Chin. Phys. B, 2022, 31(7): 077301.
[9]	Improved performance of MoS₂ FET by in situ NH₃ doping in ALD Al₂O₃ dielectric Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘). Chin. Phys. B, 2022, 31(7): 077701.
[10]	Vacuum current-carrying tribological behavior of MoS₂-Ti films with different conductivities Lu-Lu Pei(裴露露), Peng-Fei Ju(鞠鹏飞), Li Ji(吉利), Hong-Xuan Li(李红轩),Xiao-Hong Liu(刘晓红), Hui-Di Zhou(周惠娣), and Jian-Min Chen(陈建敏). Chin. Phys. B, 2022, 31(6): 066201.
[11]	Experimental investigation on divertor tungsten sputtering with neon seeding in ELMy H-mode plasma in EAST tokamak Dawei Ye(叶大为), Fang Ding(丁芳), Kedong Li(李克栋), Zhenhua Hu(胡振华), Ling Zhang(张凌), Xiahua Chen(陈夏华), Qing Zhang(张青), Pingan Zhao(赵平安), Tao He(贺涛), Lingyi Meng(孟令义), Kaixuan Ye(叶凯萱), Fubin Zhong(钟富彬), Yanmin Duan(段艳敏), Rui Ding(丁锐), Liang Wang(王亮), Guosheng Xu(徐国盛), Guangnan Luo(罗广南), and EAST team. Chin. Phys. B, 2022, 31(6): 065201.
[12]	Analysis of the generation mechanism of the S-shaped J—V curves of MoS₂/Si-based solar cells He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威). Chin. Phys. B, 2022, 31(3): 038503.
[13]	Impact of microsecond-pulsed plasma-activated water on papaya seed germination and seedling growth Deng-Ke Xi(席登科), Xian-Hui Zhang(张先徽), Si-Ze Yang(杨思泽), Seong Shan Yap(叶尚姗), Kenji Ishikawa(石川健治), Masura Hori (堀勝), and Seong Ling Yap(叶尚凌). Chin. Phys. B, 2022, 31(12): 128201.
[14]	High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔). Chin. Phys. B, 2022, 31(12): 128502.
[15]	Evolution of the high-field-side radiation belts during the neon seeding plasma discharge in EAST tokamak Ji-Chan Xu(许吉禅), Liang Wang(王亮), Guo-Sheng Xu(徐国盛), Yan-Min Duan(段艳敏), Ling-Yi Meng(孟令义), Ke-Dong Li(李克栋), Fang Ding(丁芳), Rui-Rong Liang(梁瑞荣), Jian-Bin Liu(刘建斌), and EAST Team. Chin. Phys. B, 2022, 31(10): 105203.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition

Cite this article:

Online attention

Facilitative effect of graphene quantum dots in MoS₂ growth process by chemical vapor deposition