| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2 |
| Siwen You(游思雯)1, Ziyi Shao(邵子依)1, Xiao Guo(郭晓)1, Junjie Jiang(蒋俊杰)1, Jinxin Liu(刘金鑫)1, Kai Wang(王凯)1, Mingjun Li(李明君)1, Fangping Ouyang(欧阳方平)1, Chuyun Deng(邓楚芸)2, Fei Song(宋飞)3, Jiatao Sun(孙家涛)4, and Han Huang(黄寒)1,† |
1 Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
2 College of Arts and Science, National University of Defense Technology, Changsha 410073, China;
3 Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201000, China;
4 School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China |
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Abstract Hybrid organic-inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide (MAPbI3) ultrathin films via co-deposition of PbI2 and CH3NH3I (MAI) on chemical-vapor-deposition-grown monolayer MoS2 as well as the corresponding photoluminescence (PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS2 tuned growth of MAPbI3 in a Stranski-Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI3/MoS2 heterostructures have a type-II energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI3 (at the initial stage) and on MAPbI3 crystals in averaged size of 500 nm (at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI3/transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.
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Received: 24 June 2022
Revised: 15 August 2022
Accepted manuscript online: 02 September 2022
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PACS:
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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63.20.kd
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(Phonon-electron interactions)
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78.55.-m
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(Photoluminescence, properties and materials)
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64.70.Nd
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(Structural transitions in nanoscale materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11874427 and 11804395) and the Fundamental Research Funds for the Central Universities of Central South University (Grant No. 2020zzts377). |
Corresponding Authors:
Han Huang
E-mail: physhh@csu.edu.cn
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Cite this article:
Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒) Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2 2023 Chin. Phys. B 32 017901
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