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Chin. Phys. B, 2023, Vol. 32(4): 047702    DOI: 10.1088/1674-1056/ac80ab
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A novel silicon carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC vertical diffused MOS (VDMOS), the P$+$ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P$+$ region and the gate. By this method, additional minority carriers can be injected into the drift region at on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811 V) as SiC VDMOS whose length of drift is 5.5 μm. The on-state current of SiC GCBTP is $2.47\times 10^{-3}$ A/μm ($V_{\rm G}=10$ V, $V_{\rm D}=10$ V) which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425 ns. And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor (IGBT), which is 114.72 ns.
Keywords:  SiC power device      on-state current      bipolar      vertical diffused MOS (VDMOS)      insulated gate bipolar transistor (IGBT)  
Received:  13 April 2022      Revised:  05 July 2022      Accepted manuscript online:  13 July 2022
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  84.30.Jc (Power electronics; power supply circuits)  
  85.30.Pq (Bipolar transistors)  
  66.70.Df (Metals, alloys, and semiconductors)  
Fund: Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province, China (Grant No. 2018JC-017) and 111 Project (Grant No. B12026).
Corresponding Authors:  Baoxing Duan     E-mail:  bxduan@163.com

Cite this article: 

Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current 2023 Chin. Phys. B 32 047702

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