CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor |
Zhang Li-Ning(张立宁)a)†, He Jin(何进)a)b), Zhou Wang(周旺)a), Chen Lin(陈林)a), and Xu Yi-Wen(徐艺文)a) |
a Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China; b Research Centre of Micro- & Nano-Device and Technology, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China |
|
|
Abstract This paper studies an oxide/silicon core/shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher $I_{\rm on}$/$I_{\rm off}$ ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.
|
Received: 05 July 2009
Revised: 02 August 2009
Accepted manuscript online:
|
PACS:
|
85.30.Tv
|
(Field effect devices)
|
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
85.35.-p
|
(Nanoelectronic devices)
|
|
Fund: Project supported by National
Natural Science Foundation of China (Grant No.~60876027) and
Research Fund for the Doctoral Program of Higher Education of China
(Grant No.~200800010054). |
Cite this article:
Zhang Li-Ning(张立宁), He Jin(何进), Zhou Wang(周旺), Chen Lin(陈林), and Xu Yi-Wen(徐艺文) An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor 2010 Chin. Phys. B 19 047306
|
[1] |
Auth C P and Plummer J D 1997 IEEE Electron Device Lett. 18 74
|
[2] |
Singh N, Agarwal A, Bera L K, Liow T Y, Yang R, Rustagi S C, Tung C H, Kumar R, Lo G Q, Balasubramanian N and Kwong D 2006 IEEE Electron Device Lett. 27 383
|
[3] |
Yang B, Buddharaju K, Teo S, Singh N, Lo G and Kwong D 2008 IEEE Electron Device Lett. 29 791
|
[4] |
Cui Y, Lauhon L J, Gudiksen M S, Wang J and Lieber C M 2001 Appl. Phys. Lett. 78 2214
|
[5] |
Fu J, Singh N, Buddharaju K, Teo S, Shen C, Jiang Y, Zhu C, Yu M, Lo G, Balasubramanian N, Kwong D, Gnani E and Baccarani G 2008 IEEE Electron Device Lett. 29 518
|
[6] |
Rustagi S, Singh N, Fang W, Buddharaju K, Omampuliyur S, Teo S, Tung C, Lo G, Balasubramanian N and Kwong D 2007 IEEE Electron Device Lett. 28 1021
|
[7] |
Singh N, Fang W, Rustagi S, Budharaju K, Teo S, Mohanraj S, Lo G, Balasubramanian N and Kwong D L 2006 IEEE Electron Device Lett. 27 558
|
[8] |
Lauhon L J, Gudiksen M S, Wang D and Lieber C M 2002 Nature 420 57
|
[9] |
Waite A M, Lloyd N S, Auhburn P, Evans A G, Ernst T, Achard H, Deleonibus S, Wang Y and Hemment P 2003 ESSDRC} {223
|
[10] |
TCAD Sentaurus Device User's Manual} 2007 Synopsys, Mountain View, CA
|
[11] |
Wettstein A, Schenk A and Fichtner W 2001 IEEE Trans. Electron Devices 48 279
|
[12] |
Wang J, Polizzi E and Lundstrom M S 2004 J. Appl. Phys. 96 2192
|
[13] |
Ge L and Fossum J G 2002 IEEE Trans. Electron Devices] 49 287
|
[14] |
Ray B and Mahapatra S 2008 IEEE Trans. Electron Devices 55 2409
|
[15] |
Yu B, Wang L, Yuan Y, Asbeck P M and Taur Y 2008 IEEE Trans. Electron Devices 55 2846
|
[16] |
Choi Y, Asano K, Lindert N, Subramanian V, King T, Bokor J and Hu C 2000 IEEE Electron Device Lett. 21 254
|
[17] |
Stern F 1982 Phys. Rev. B 5 4891
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|