Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Zhang Xue-Feng(张雪锋)a), Xu Jing-Ping (徐静平)a)† , Lai Pui-To(黎沛涛)b) , Li Chun-Xia(李春霞)b), and Guan Jian-Guo(官建国)c)
a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China; c State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Abstract A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-$k$ dielectric/SiO$_{2}$ gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO$_{2})$ thickness and permittivities of the high-$k$ dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-$k$ dielectric and interlayer, as well as moderate permittivities of high-$k$ dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data.
Fund: Project supported by the National Natural Science
Foundation of China (Grant No~60776016), the RGC of HKSAR, China (Grant
No~HKU7142/05E), and Open Foundation of State Key Laboratory of Advanced
Technology for Materials Synthesis and Processing (Grant No~
Cite this article:
Zhang Xue-Feng(张雪锋), Xu Jing-Ping (徐静平), Lai Pui-To(黎沛涛), Li Chun-Xia(李春霞), and Guan Jian-Guo(官建国) Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack 2007 Chinese Physics 16 3820
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