Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

doi:10.1088/1674-1056/22/4/047304

Abstract The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V_d) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.

Keywords: pMOSFETs hot carrier effect (HCE) degradation lifetime modeling

Received: 12 September 2012
Revised: 22 October 2012
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

Corresponding Authors: Lei Xiao-Yi
E-mail: lydialeixy@163.com

Cite this article:

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Kai (张凯), Zhang Yue (张月), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET 2013 Chin. Phys. B 22 047304

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Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

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