INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Lead zirconate titanate behaviors in LDMOS |
Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ± 10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
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Received: 19 December 2012
Revised: 04 February 2013
Accepted manuscript online:
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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77.55.df
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(For silicon electronics)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 50772019) and the National Natural Science Foundation of China (Grant No. 61204084). |
Corresponding Authors:
Zhai Ya-Hong
E-mail: yhzhai@uestc.edu.cn
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Cite this article:
Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚) Lead zirconate titanate behaviors in LDMOS 2013 Chin. Phys. B 22 078501
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