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Chin. Phys. B, 2013, Vol. 22(7): 078501    DOI: 10.1088/1674-1056/22/7/078501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Lead zirconate titanate behaviors in LDMOS

Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ± 10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
Keywords:  laterally diffused metal oxide semiconductor (LDMOS)      lead zirconate titanate      memory behavior      retention  
Received:  19 December 2012      Revised:  04 February 2013      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.50.-n (Dielectric, ferroelectric, and piezoelectric devices)  
  77.55.df (For silicon electronics)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 50772019) and the National Natural Science Foundation of China (Grant No. 61204084).
Corresponding Authors:  Zhai Ya-Hong     E-mail:  yhzhai@uestc.edu.cn

Cite this article: 

Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚) Lead zirconate titanate behaviors in LDMOS 2013 Chin. Phys. B 22 078501

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