|
|
Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs |
Peng Chao (彭超)a, Hu Zhi-Yuan (胡志远)a, Ning Bing-Xu (宁冰旭)a, Huang Hui-Xiang (黄辉祥)a, Fan Shuang (樊双)a, Zhang Zheng-Xuan (张正选)a, Bi Da-Wei (毕大炜)a, En Yun-Fei (恩云飞)b |
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China |
|
|
Abstract We investigate the effects of 60Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator (PDSOI) input/output (I/O) n-MOSFETs. A shallow trench isolation (STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose (TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower (DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.
|
Received: 11 March 2014
Revised: 25 March 2014
Accepted manuscript online:
|
PACS:
|
07.89.+b
|
(Environmental effects on instruments (e.g., radiation and pollution effects))
|
|
42.88.+h
|
(Environmental and radiation effects on optical elements, devices, and systems)
|
|
85.30.-z
|
(Semiconductor devices)
|
|
Fund: Project supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201205) and the National Natural Science Foundation of China (Grant No. 61106103). |
Corresponding Authors:
Zhang Zheng-Xuan
E-mail: zxzhang@mail.sim.ac.cn
|
Cite this article:
Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞) Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs 2014 Chin. Phys. B 23 090702
|
[1] |
Schwank J R, Shaneyfelt M R and Dodd P E 2013 IEEE Trans. Nucl. Sci. 60 2074
|
[2] |
Barth J L, Dyer C S and Stassinopoulos E G 2003 IEEE Trans. Nucl. Sci. 50 466
|
[3] |
Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706
|
[4] |
Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
|
[5] |
Oldham T R and McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
|
[6] |
Lukyanchikova N B, Petrichuk M V, Garbar N, Mercha A, Simoen E and Claeys C 2003 J. Appl. Phys. 94 4461
|
[7] |
Leray J L, Dupontnivet E, Musseau O, Coic Y M, Umbert A, Lalande P, Pere J F, Aubertonherve A J, Bruel M, Jaussaud C, Margail J, Giffard B, Truche R and Martin F 1988 IEEE Trans. Nucl. Sci. 35 1355
|
[8] |
Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P and Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
|
[9] |
Schwank J R, Shaneyfelt M R, Dodd P E, Burns J A, Keast C L and Wyatt P W 2000 IEEE Trans. Nucl. Sci. 47 604
|
[10] |
McLain M, Bamaby H J, Holbert K E, Schrimpf R D, Shah H, Amort A, Baze M and Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
|
[11] |
Dodd P E, Shaneyfelt M R, Schwank J R and Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
|
[12] |
Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Chin. Phys. B 20 120703
|
[13] |
Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Chin. Phys. B 20 070701
|
[14] |
Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W and Zou S C 2011 Chin. Phys. B 20 120702
|
[15] |
Shaneyfelt M R, Dodd P E, Draper B L and Flores R S 1998 IEEE Trans. Nucl. Sci. 45 2584
|
[16] |
Muller R S and Kamins T I 1986 Device Electronics for Integrated Circuits (New York: John Wiley & Sons)
|
[17] |
Youk G U, Khare P S, Schrimpf R D, Massengill L W and Galloway K F 1999 IEEE Trans. Nucl. Sci. 46 1830
|
[18] |
Cheng Y and Hu C MOSFET Modeling & BSIM3 User's Guide (New York: Kluwer Academic Publishers) p. 44
|
[19] |
Zhu M, Lin Q, Zhang Z X and Lin C L 2003 Chin. Phys. Lett. 20 767
|
[20] |
Ferlet-Cavrois V, Gasiot G, Marcandella C, D'Hose C, Flament O, Faynot O, de Pontcharra J D and Raynaud C 2002 IEEE Trans. Nucl. Sci. 49 2948
|
[21] |
Celler G K and Cristoloveanu S 2003 J. Appl. Phys. 93 4955
|
[22] |
Wolf S and Tauber R N Silicon Processing for the VLSI Era (Vol. 4) (California: Lattice Press) p. 435
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|