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Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells |
| He-Ju Xu(许贺菊)1,†, Li-Tao Xin(辛利桃)2, Dong-Qiang Chen(陈东强)2, Ri-Dong Cong(丛日东)2,‡, and Wei Yu(于威)2,§ |
1 College of Science, North China University of Science and Technology, Tangshan 063009, China;
2 College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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Abstract Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.
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Received: 13 February 2021
Revised: 02 August 2021
Accepted manuscript online: 07 August 2021
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PACS:
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85.30.-z
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(Semiconductor devices)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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| Fund: Project supported by the Science and Technology Research Project of Hebei Province Colleges and Universities (Grant No. QN2020113) and Tangshan Applied Basic Research Project (Grant No. 19130227g). We would like to thank Editage (www.editage.cn) for English language editing. |
Corresponding Authors:
He-Ju Xu, Ri-Dong Cong, Wei Yu
E-mail: xuheju@ncst.edu.cn;congrd@hbu.edu.cn;yuwei@hbu.edu.cn
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Cite this article:
He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威) Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells 2022 Chin. Phys. B 31 038503
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