Chin. Phys. B, 2016, Vol. 25(3): 038502    DOI: 10.1088/1674-1056/25/3/038502
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# Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Yan-hui Xin(辛艳辉)1,2, Sheng Yuan(袁胜)1, Ming-tang Liu(刘明堂)1,Hong-xia Liu(刘红侠)2, He-cai Yuan(袁合才)3
1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou 450046, China;
2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;
3. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450046, China
Abstract  The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.
Keywords:  double-material double-gate MOSFET      strained Si      threshold voltage      subthreshold current
Received:  16 September 2015      Revised:  10 November 2015      Accepted manuscript online:
 PACS: 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices) 85.35.-p (Nanoelectronic devices)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376099, 11235008, and 61205003).
Corresponding Authors:  Hong-xia Liu     E-mail:  hxliu@mail.xidian.edu.cn