Performance enhancement of CMOS terahertz detector by drain current

doi:10.1088/1674-1056/26/9/098401

Abstract

In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor field-effect transistors (MOSFETs) both theoretically and experimentally. The analytical model, which is based on the small-signal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity R_v with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the R_v improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power (NEP) with the applied current. We determine the tradeoff between the low-NEP and high-R_v for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in R_v without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.

Keywords: drain current CMOS terahertz detectors voltage responsivity noise equivalent power

Received: 17 April 2017
Revised: 07 June 2017
Accepted manuscript online:

PACS:	84.40.Lj	(Microwave integrated electronics)
	85.30.Tv	(Field effect devices)
	87.50.U-
	87.57.cm	(Noise)

Fund:

Project supported by the National Key R&D Program of China (Grant No. 2016YFB-0402403), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20141321), CAST Project, China (Grant No. 08201601), and the National Science Foundation for Young Scholars of China (Grant No. 61404072).

Corresponding Authors: Xiaoli Ji
E-mail: xji@nju.edu.cn

Cite this article:

Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋) Performance enhancement of CMOS terahertz detector by drain current 2017 Chin. Phys. B 26 098401

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