An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

doi:10.1088/1674-1056/ac9045

Abstract A power MOSFET with integrated split gate and dummy gate (SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS. The split gate is surrounded by the source and shielded by the dummy gate. Consequently, the coupling area between the split gate and the drain electrode is reduced, thus the gate-to-drain charge (

Q_{G D}

), reverse transfer capacitance (

C_{R S S}

) and turn-off loss (

E_{o f f}

) are significantly decreased. Moreover, the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide

t_{o x}

, which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction, then the majority carriers are injected to the N-drift to attenuate the minority injection. Therefore, the reverse recovery charge (

Q_{R R}

), time (

T_{R R}

) and peak current (

I_{R R M}

) are effectively reduced at the reverse freewheeling state. Additionally, the specific on-resistance (

R_{o n, s p}

) and breakdown voltage (

B V

) are also studied to evaluate the static properties of the proposed SD-MOS. The simulation results show that the

Q_{G D}

of 6 nC/cm

^{2}

, the

C_{R S S}

of 1.1 pF/cm

^{2}

at the

V_{D S}

of 150 V, the

Q_{R R}

of 1.2 μC/cm

^{2}

and the

R_{o n, s p}

of 8.4 m

Ω \cdot

cm

^{2}

are obtained, thus the figures of merit (FOM) including

Q_{G D} \times R_{o n, s p}

of 50 nC

\cdot

m

Ω

,

E_{o f f} \times R_{o n, s p}

of 0.59 mJ

\cdot

m

Ω

and the

Q_{R R} \times R_{o n, s p}

of 10.1 μC

\cdot

m

Ω

are achieved for the proposed SD-MOS.

Keywords: MOSFET split gate dummy gate turn-off and reverse recovery

Received: 29 April 2022
Revised: 05 September 2022
Accepted manuscript online: 08 September 2022

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	51.50.+v	(Electrical properties)

Fund: Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016) and the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550).

Corresponding Authors: Liuting Mou
E-mail: 1005205632@qq.com

Cite this article:

Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生) An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics 2023 Chin. Phys. B 32 067303

[1] Yang B, Wang J, Xu S, Korec J and Shen Z J2013 IEEE Trans. Power Electron. 28 4202
[2] Saxena R S and Kumar M J2009 IEEE Trans. Electron Devices 56 1355
[3] Saxena R S and Kumar M J2009 IEEE Electron Device Lett. 30 990
[4] Chen W, Qin H, Huang Y, Huang Y and Han Z2021 IEEE Trans. Electron Devices 68 6286
[5] Chen W, Qin H, Zhang H and Han Z2022 IEEE Trans. Electron Devices 69 1900
[6] Wang Y, Hu H, Jiao W and Cheng C2010 IEEE Electron Device Lett. 31 338
[7] Saxena R S and Kumar M J2009 IEEE Trans. Electron Devices 56 1355
[8] Jiang Q, Wang M and Chen X2010 IEEE Trans. Electron Devices 57 1972
[9] Cheng X, Sin J K O, Kang B, Feng C, Wu Y and Liu X2003 IEEE Trans. Electron Devices 50 1422
[10] Xu S, Ren C, Liang Y. C, Foo P and Sin J K O2001 IEEE Trans. Electron Devices 48 2168
[11] Ng J C W and Sin J K O2009 IEEE Trans. Electron Devices 56 1761
[12] Xu S, Can K, Foo P, Su Y and Liu Y2000 IEEE Electron Device Lett. 21 176
[13] Wei J, Zhang M, Jiang H, Zhou X, Li B and Chen K J2019 IEEE Electron Device Lett. 40 1155
[14] Lin Z, Hu S, Yuan Q, Zhou X and Tang F2017 IEEE Electron Device Lett. 38 1059
[15] Natarajan, Varadarajan, Hitchcock and Chow2004 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs pp. 261-264
[16] Baliga B J and Chang H R1987 1987 International Electron Devices Meeting pp. 658-661
[17] Xu Z, Zhang B and Huang A Q2000 IEEE Trans. Power Electron 15 916
[18] Rodov V, Ankoudinov A L and Taufik2008 IEEE Trans. Ind. Appl. 44 234
[19] Chen W, et al.2017 IEEE Electron Device Lett. 38 902
[20] Ye Z, Liu L, Yao Y, Lin M and Wang P2019 IEEE Electron Device Lett. 40 1159
[21] Zhou X, et al.2020 IEEE Trans. Electron Devices 67 582
[22] Zhang M, Wei J, Zhou X, Jiang H, Li B and Chen K J2019 IEEE Electron Device Lett. 40 79
[23] Sentaurus Device User Guide, Version J-2014.09, Synopsys, Mountain View, CA, USA, Sep. 2014

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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

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