Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

doi:10.1088/1674-1056/23/1/018501

Abstract Based on the quasi-two-dimensional (2D) solution of Poisson’s equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

Keywords: junctionless device surrounding-gate MOSFET dual-material gate analytical model

Received: 24 April 2013
Revised: 17 June 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204092 and 61076101) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. K50511250001).

Corresponding Authors: Li Cong
E-mail: cong.li@mail.xidian.edu.cn

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Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate 2014 Chin. Phys. B 23 018501

[1]	Yu B, Lu W Y, Lu H and Taur Y 2007 IEEE Tran. Electron Dev. 54 492
[2]	Li Z C 2008 Chin. Phys. B 17 4312
[3]	Li C, Zhuang Y Q, Zhang L and Bao J L 2012 Chin. Phys. B 21 048501
[4]	Lee C W, Borne A, Ferain I, Afzalian A, Yan R, Akhavan N D, Razavi P and Colinge J P 2010 IEEE Tran. Electron Dev. 57 620
[5]	Chiang T K 2012 IEEE Tran. Electron Dev. 59 3127
[6]	Jin X S, Liu X, Hyuck-In K and Jong-Ho L 2013 Chin. Phys. Lett. 30 038502
[7]	Han M H, Chang C Y, Jhan Y R, Wu J J, Chen H B, Cheng Y C and Wu Y C 2013 IEEE Electron Dev. Lett. 34 157
[8]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher A M, McCarthy B and Murphy R 2010 Nat. Nano. 5 225
[9]	Lee C W, Ferain I, Afzalian A, Yan R, Akhavan N D, Razavi P and Colinge J P 2010 Solid-State Electron. 54 97
[10]	Doria R T, Pavanello M A, Trevisoli R D, de Souza M, Lee C W, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Kranti A and Colinge J P 2011 IEEE Tran. Electron Dev. 58 2511
[11]	Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J and Chan M 2012 IEEE Tran. Electron Dev. 59 1829
[12]	Duarte J P, Choi S J, Moon D I and Choi Y K 2012 IEEE Electron Dev. Lett. 33 155
[13]	Trevisoli R D, Doria R T, de Souza M and Pavanello M A 2011 Semicond. Sci. Technol. 26 105009
[14]	Jimenez D, Iniguez B, Sune J, Marsal L F, Pallares J, Roig J and Flores D 2004 IEEE Electron Dev. Lett. 25 571
[15]	Zhang X J, Yang Y T, Duan B X, Chai C C, Song K and Chen B 2012 Chin. Phys. B 21 097302
[16]	Saxena M, Haldar S, Gupta M and Gupta R S 2002 IEEE Tran. Electron Dev. 49 1928
[17]	Omura Y, Horiguchi S, Tabe M and Kishi K 1993 IEEE Electron Dev. Lett. 14 569

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Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

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