Please wait a minute...
Chinese Physics, 2006, Vol. 15(1): 195-198    DOI: 10.1088/1009-1963/15/1/031
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

Ma Xiao-Hua (马晓华)ab, Hao Yue (郝跃)ab, Sun Bao-Gang (孙宝刚)c, Gao Hai-Xia (高海霞)ab, Ren Hong-Xia (任红霞)ab, Zhang Jin-Cheng (张进城)ab, Zhang Jin-Feng (张金凤)ab, Zhang Xiao-Ju (张晓菊)ab, Zhang Wei-Dong (张卫东)d
a Microelectronics Institute, Xidian University, Xi'an 710071, China; b Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices,Xidian University, Xi'an 710071, Chinac Microelectronics Institute, Chinese Academy of Sciences, Beijing 100029, China; d School of Design, Engineering and Computing, Bournemouth University, UK
Abstract  N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET. These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.
Keywords:  self-aligned      groove-gate MOSFETs      DIBL      short-channeleffects  
Received:  29 March 2005      Revised:  09 September 2005      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60376024).

Cite this article: 

Ma Xiao-Hua (马晓华), Hao Yue (郝跃), Sun Bao-Gang (孙宝刚), Gao Hai-Xia (高海霞), Ren Hong-Xia (任红霞), Zhang Jin-Cheng (张进城), Zhang Jin-Feng (张金凤), Zhang Xiao-Ju (张晓菊), Zhang Wei-Dong (张卫东) Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process 2006 Chinese Physics 15 195

[1] Constructing the three-qudit unextendible product bases with strong nonlocality
Bichen Che(车碧琛), Zhao Dou(窦钊), Xiubo Chen(陈秀波), Yu Yang(杨榆), Jian Li(李剑), and Yixian Yang(杨义先). Chin. Phys. B, 2022, 31(6): 060302.
[2] Thermodynamically consistent model for diblock copolymer melts coupled with an electric field
Xiaowen Shen(沈晓文) and Qi Wang(王奇). Chin. Phys. B, 2022, 31(4): 048201.
[3] Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选). Chin. Phys. B, 2018, 27(2): 028501.
[4] Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平). Chin. Phys. B, 2016, 25(8): 087308.
[5] Self-assembly of block copolymers grafted onto a flat substrate: Recent progress in theory and simulations
Zheng Wang(王铮) and Bao-Hui Li(李宝会). Chin. Phys. B, 2016, 25(1): 016402.
[6] Self-assembly of lamella-forming diblock copolymers confined in nanochannels: Effect of confinement geometry
Yu Bin (于彬), Deng Jian-Hua (邓建华), Wang Zheng (王铮), Li Bao-Hui (李宝会), Shi An-Chang (史安昌). Chin. Phys. B, 2015, 24(4): 046402.
[7] Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇). Chin. Phys. B, 2015, 24(2): 027101.
[8] Phase behaviors in binary mixture of diblock copolymers confined between two parallel walls
Pan Jun-Xing (潘俊星), Zhang Jin-Jun (张进军), Wang Bao-Feng (王宝凤), Wu Hai-Shun (武海顺), Sun Min-Na (孙敏娜 ). Chin. Phys. B, 2013, 22(2): 026401.
[9] Surface-field-induced effects on morphologies of lamella-forming diblock copolymers in nanorod arrays
Wang Xiang-Hong(王向红), Li Shi-Ben(李士本), Zhang Lin-Xi(章林溪), and Liang Hao-Jun(梁好均) . Chin. Phys. B, 2011, 20(8): 083601.
[10] Cylindrical-confinement-induced phase behaviours of diblock copolymer melts
Liu Mei-Jiao(刘美娇), Li Shi-Ben(李士本), Zhang Lin-Xi(章林溪), and Wang Xiang-Hong(王向红). Chin. Phys. B, 2010, 19(2): 028101.
[11] Corner effects in double-gate/gate-all-around MOSFETs
Hou Xiao-Yu(侯晓宇), Zhou Fa-Long(周发龙), Huang Ru(黄如), and Zhang Xing(张兴). Chin. Phys. B, 2007, 16(3): 812-816.
[12] Self-assembly behaviour of amphiphilic diblock copolymer in selective solvents studied by synchrotron small-angle x-ray scattering
Rong Li-Xia (荣利霞), Wei Liu-He (魏柳禾), Dong Bao-Zhong (董宝中), Hong Xin-Guo (洪新国), Li Fu-Mian (李福绵), Li Zi-Chen (李子臣). Chin. Phys. B, 2003, 12(7): 771-777.
No Suggested Reading articles found!