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Chin. Phys. B, 2018, Vol. 27(2): 028103    DOI: 10.1088/1674-1056/27/2/028103
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Observation of oscillations in the transport for atomic layer MoS2

Xiao-Qiang Xie(解晓强)1, Ying-Zi Peng(彭英姿)1,2, Qi-Ye Zheng(郑奇烨)1, Yuan Li(李源)1,2, Ji Chen(陈吉)1
1. Department of Physics, School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China;
2. Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
Abstract  In our experiment, an atomic layer MoS2 structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at~107 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed.
Keywords:  atomic-layer MoS2      oscillations in the transport      circular polarized light      photo-excited carriers  
Received:  07 July 2017      Revised:  09 November 2017      Accepted manuscript online: 
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  73.23.-b (Electronic transport in mesoscopic systems)  
  68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)  
Fund: Project supported by the Zhejiang Provincial Natural Science Foundation, China (Grant Nos. LY16F040003 and LY16A040007) and the National Natural Science Foundation of China (Grant Nos. 51401069 and 11204058).
Corresponding Authors:  Ying-Zi Peng     E-mail:  yingzip@hdu.edu.cn
About author:  81.07.-b; 73.23.-b; 68.65.-k

Cite this article: 

Xiao-Qiang Xie(解晓强), Ying-Zi Peng(彭英姿), Qi-Ye Zheng(郑奇烨), Yuan Li(李源), Ji Chen(陈吉) Observation of oscillations in the transport for atomic layer MoS2 2018 Chin. Phys. B 27 028103

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[1] Characterization of atomic-layer MoS2 synthesized using a hot filament chemical vapor deposition method
Ying-Zi Peng(彭英姿), Yang Song(宋扬), Xiao-Qiang Xie(解晓强), Yuan Li(李源), Zheng-Hong Qian(钱正洪), Ru Bai(白茹). Chin. Phys. B, 2016, 25(5): 058104.
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