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A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission |
| Dong Zhang(张栋)1, Jianjun Song(宋建军)1,2,†, Xiaohuan Xue(薛笑欢)1, and Shiqi Zhang(张士琦)1 |
1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Radiation Resistant Integrated Circuit Technology Laboratory of China Aerospace Science and Technology Group Corporation, Xi'an 710071, China |
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Abstract The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) with a Si0.14Ge0.72Sn0.14-Ge0.82Sn0.18-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si0.14Ge0.72Sn0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ , the rectification efficiency of the device can reach 7.14% at an input power of -10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of -30 dBm to 6.9 dBm.
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Received: 09 September 2021
Revised: 19 October 2021
Accepted manuscript online: 27 October 2021
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PACS:
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84.40.Dc
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(Microwave circuits)
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84.60.Bk
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(Performance characteristics of energy conversion systems; figure of merit)
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73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National 111 Center (Grant No. B12026) and Research on *** Technology of Intelligent Reconfigurable General System (Grant No. F020250058). |
Corresponding Authors:
Jianjun Song
E-mail: jianjun_79_81@xidian.edu.cn
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Cite this article:
Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦) A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission 2022 Chin. Phys. B 31 068401
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