The fabrication and characterization of 4H SiC power UMOSFETs

doi:10.1088/1674-1056/22/2/027302

Abstract The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3×10¹⁵ cm^-3 N-type doping concentration and a 3.1-μm channel length. The measured on-state source-drain current density is 65.4 A/cm² at V_g=40 V and V_DS=15 V. The measured threshold voltage (V_th) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (R_sp-on) is 181 mΩ·cm² at V_g=40 V and a blocking voltage (BV) is 880 V (I_DS=100 μA@880V) at V_g=0 V.

Keywords: UMOSFETs 4H-SiC specific on-resistance blocking voltage

Received: 22 August 2012
Revised: 19 November 2012
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Le	(Other inorganic semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176070 and 61274079); the Doctoral Fund of Ministry of Education of China (Grant No. 20110203110010); and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Cite this article:

Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Han Ji-Sheng (韩吉胜), Philip Tanner, Sima Dimitrijev, Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Guo Hui (郭辉) The fabrication and characterization of 4H SiC power UMOSFETs 2013 Chin. Phys. B 22 027302

[1]	Sui Y, Tsuji T and Cooper J A Jr 2005 IEEE Electron. Dev. Lett. 26 255
[2]	Song Q W, Zhang Y M, Zhang Y M, Tang X Y and Jia R X 2012 Sci. Chin.: Tech. Sci. 55 606
[3]	Tang X Y, Zhang Y M and Zhang Y M 2010 Chin. Phys. B 19 047204
[4]	Chen F P, Zhang Y M, Zhang Y M, Lu H L and Song Q W 2010 Chin. Phys. B 19 047305
[5]	Li Y, Cooper Jr J A and Capano M A 2002 IEEE Electron. Dev. Lett. 49 972
[6]	Ryu S H, Krishnaswami S, O'Loughlin M, Richmond J, Agarwal A, Palmour J and Hefner A R 2004 IEEE Electron. Dev. Lett. 25 556
[7]	Howell R, Buchoff S, Van C S, Mcnutt T, Ezis A, Nechay B, Kirby C, Sherwin M, Clarke C and Singh R 2008 IEEE Trans. Electron. Dev. 55 1807
[8]	Noborio M, Suda J and Kimoto T 2008 Proc. 20th Int. Symp. Power Semicond. Devices ICs. pp. 263-266
[9]	Lee W S, Lin C W, Yang M H, Huang C F, Gong J and Zhao F 2011 IEEE Electron. Dev. Lett. 32 360
[10]	Zhang Q, Zhang Y M, Yuan L, Zhang Y M, Tang X Y and Song Q W 2012 Chin. Phys. B 21 088502
[11]	Cheng F P, Zhang Y M, Lu H L, Zhang Y M, Guo H and Guo X 2011 Chin. J. Semicond. 32 064003
[12]	Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L and Chen C 2007 Chin. J. Semicond. 28 10
[13]	Chen G, Li Z Y, Bai S and Ren C J 2007 Chin. J. Semicond. 28 1333
[14]	Song Q W, Zhang Y M, Zhang Y M, Zhang Q and Lu H L 2010 Chin. Phys. B 19 087202
[15]	Tang X Y, Song Q W, Zhang Y M, Zhang Y M, Jia R X, Lu H L and Wang Y H 2012 Chin. Phys. B 21 087701

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The fabrication and characterization of 4H SiC power UMOSFETs

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