Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors

doi:10.1088/1674-1056/26/12/127302

Abstract An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET), in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator (SOI) MOSFETs.

Keywords: nanowire MOSFETs coupling capacitance fringing capacitance quantum dot

Received: 26 April 2017
Revised: 10 August 2017
Accepted manuscript online:

PACS:	73.21.La	(Quantum dots)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	73.21.Hb	(Quantum wires)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474041).

Corresponding Authors: Hong-Guan Yang
E-mail: yanghg@hnu.edu.cn

Cite this article:

Yan-Bing Xu(徐雁冰), Hong-Guan Yang(杨红官) Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors 2017 Chin. Phys. B 26 127302

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Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors

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