Abstract Drain-modulated generation current IDMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of IDMG ascribes to the change of the Si surface potential φs. This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VD increases. The reason for this unconformity is that the drain-to-gate voltage VDG lessens φs around the drain corner and controls the falling edge of the IDMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMG falling edge is set up in which IDMG has an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t=80 mV=3kT/q. This result fully shows the accuracy of the above mechanism.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).
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