| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Simulation of optical and electrical synaptic functions in MoS2/α-In2Se3 heterojunction memtransistors |
| Tao Xiang(相韬), Fengxiang Chen(陈凤翔)†, Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜)‡ |
| Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China |
|
|
|
|
Abstract Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3 and MoS2 were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS2/α-In2Se3 memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.
|
Received: 25 June 2023
Revised: 28 July 2023
Accepted manuscript online: 09 August 2023
|
|
PACS:
|
73.40.Sx
|
(Metal-semiconductor-metal structures)
|
| |
87.18.Sn
|
(Neural networks and synaptic communication)
|
| |
85.30.Pq
|
(Bipolar transistors)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51702245). |
Corresponding Authors:
Fengxiang Chen, Lisheng Wang
E-mail: phonixchen79@whut.edu.cn;wang_lesson@whut.edu.cn
|
Cite this article:
Tao Xiang(相韬), Fengxiang Chen(陈凤翔), Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜) Simulation of optical and electrical synaptic functions in MoS2/α-In2Se3 heterojunction memtransistors 2023 Chin. Phys. B 32 117301
|
[1] Wulf W A and McKee S A 1995 SIGARCH Comput. Archit. News 23 20
[2] Merolla P A, Arthur J V, Alvarez-Icaza R, Cassidy A S, Sawada J, Akopyan F, Jackson B L, Imam N, Guo C, Nakamura Y, Brezzo B, Vo I, Esser S K, Appuswamy R, Taba B, Amir A, Flickner M D, Risk W P, Manohar R and Modha D S 2014 Science 345 668
[3] Huang C H, Chang H, Yang T Y, Wang Y C, Chueh Y L and Nomura K 2021 ACS Appl. Mater. Interfaces 13 52822
[4] Sangwan V K, Lee H S, Bergeron H, Balla I, Beck M E, Chen K S and Hersam M C 2018 Nature 554 500
[5] Nguyen D A, Jo Y, Tran T U, Jeong M S, Kim H and Im H 2021 Small Methods 5 2101303
[6] Krishnaprasad A, Dev D, Han S S, Shen Y, Chung H S, Bae T S, Yoo C, Jung Y, Lanza M and Roy T 2022 ACS Nano 16 2866
[7] Jiang J, Hu W N, Xie D D, Yang J L, He J, Gao Y L and Wan Q 2019 Nanoscale 11 1360
[8] Jacobs-Gedrim R B, Shanmugam M, Jain N, Durcan C A, Murphy M T, Murray T M, Matyi R J, Moore R L and Yu B 2014 ACS Nano 8 514
[9] Wang L, Wang X J, Zhang Y S, Li R L, Ma T, Leng K, Chen Z, Abdelwahab I and Loh K P 2020 Adv. Funct. Mater. 30 2004609
[10] Zhou Y, Wu D, Zhu Y H, Cho Y J, He Q, Yang X, Herrera K, Chu Z D, Han Y, Downer M C, Peng H L and Lai K J 2017 Nano Lett. 17 5508
[11] Wan S Y, Li Y, Li W, Mao X Y, Zhu W G and Zeng H L 2018 Nanoscale 10 14885
[12] Zhou J D, Zeng Q S, Lv D H, Sun L F, Niu L, Fu W, Liu F C, Shen Z X, Jin C H and Liu Z 2015 Nano Lett. 15 6400
[13] Wang L, Liao W G, Wong S L, Yu Z G, Li S F, Lim Y, Feng X W, Tan W C, Huang X, Chen L, Liu L, Chen J S, Gong X, Zhu C X, Liu X K, Zhang Y W, Chi D Z and Ang K 2019 Adv. Funct. Mater. 29 1901106
[14] Si M W, Saha A K, Gao S J, Qiu G, Qin J K, Duan Y Q, Jian J, Niu C, Wang H Y, Wu W Z, Gupta S K and Ye P D 2019 Nat. Electron. 2 580
[15] Jiang J, Zheng Z M and Guo J J 2016 Physica B 498 76
[16] Guo Y, Wei X L, Shu J P, Liu B, Yin J B, Guan C R, Han Y X, Gao S and Chen Q 2015 Appl. Phys. Lett. 106 103109
[17] Wang Y H, Li D Y, Lai X B, Liu B Y, Chen Y B, Wang F P, Wang R M and Zhang L W 2020 Current Appl. Phys. 20 298
[18] Wang Y, Lv Z Y, Chen J R, Wang Z P, Zhou Y, Zhou L, Chen X L and Han S T 2018 Adv. Mater. 30 1802883
[19] Zucker R S and Regehr W G 2002 Annu. Rev. Physiol. 64 355
[20] Abbott L F and Regehr W G 2004 Nature 431 796
[21] Cai W F, Wang J Y, He Y M, Liu S, Xiong Q H, Liu Z and Zhang Q 2021 Nano-Micro Lett. 13 74
[22] Wang R, Wang T, Zhou Y, Wu Y L, Zhang X X, He X Y, Peng H L, Zhao J M and Qiu X H 2019 2D Mater. 6 035034
[23] Yin S Q, Song C, Sun Y M, Qiao L L, Wang B L, Sun Y F, Liu K, Pan F and Zhang X Z 2019 ACS Appl. Mater. Interfaces 11 43344
[24] Hu L D, Li L, Chang K C, Lin X N, Huang P and Zhang S D 2021 Adv. Funct. Mater. 31 2106015 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
