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Chin. Phys. B, 2022, Vol. 31(1): 018504    DOI: 10.1088/1674-1056/ac0038
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读)
Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China
Abstract  A three-dimensional (3D) silicon-carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a heterojunction diode (HJD-TMOS) is proposed and studied in this work. The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate. When the device is in the turn-on state, the body parasitic diode can be effectively controlled by the embedded HJD, the switching loss thus decreases for the device. Moreover, a highly-doped P+ layer is encircled the gate oxide on the same side as the HJD and under the gate oxide, which is used to lighten the electric field concentration and improve the reliability of gate oxide layer. Physical mechanism for the HJD-TMOS is analyzed. Comparing with the conventional device with the same level of on-resistance, the breakdown voltage of the HJD-TMOS is improved by 23.4%, and the miller charge and the switching loss decrease by 43.2% and 48.6%, respectively.
Keywords:  heterojunction diode      SiC MOSFET      switching loss      on-state resistance  
Received:  13 April 2021      Revised:  05 May 2021      Accepted manuscript online:  12 May 2021
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  51.50.+v (Electrical properties)  
Fund: Project supported by the Natural Science Foundation Project of Chongqing Science and Technology Commission, China (Grant No. cstc2020jcyj-msxmX0243), the Fundamental Research Funds for the Central Universities, China (Grant No. 2020CDJ-LHZZ-024), and the Chongqing Technology Innovation and Application Development Key Project, China (Grant No. cstc2019jscx-zdztzxX0051).
Corresponding Authors:  Zhi-Yong Huang     E-mail:  zyhuang@cqu.edu.cn

Cite this article: 

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读) A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode 2022 Chin. Phys. B 31 018504

[1] Zhang M, Wei J, Jiang P H, et al. 2016 IET Power Electronics 10 1208
[2] Shen P, Wang Y, Li X J, et al. 2021 Chin. Phys. B 30 058502
[3] Chen X N, Song B B, Li X, et al. 2021 Chin. Phys. B 30 048504
[4] Jiang H, Wei J, Dai X, et al. 2017 Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC’s, May 28–June 1, 2017, Sapporo, Japan, p. 49
[5] Conrad M and DeDoncker R W 2015 Proceeding of the 6th International Symposium on Power Electronics for Distributed Generation Systems, June 22–25, 2015, Aachen, Germany, p. 1
[6] Yamashita N, Murakami N and Yachi T 1998 IEEE Trans. Power Electron. 13 667
[7] Kim J and Kim K 2018 Energies 13 4602
[8] Hsu F J, Yen C T and Hung C C 2017 Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC’s, May 28–June 1, 2017, Sapporo, Japan, p. 45
[9] Chen R, Hu H, Lin Y and Chen X B 2020 IEEE Journal of the Electron Devices Society 8 594
[10] Jiang H, Wei J, Dai X, et al. 2016 Proceeding of the 28th International Symposium on Power Semiconductor Devices and ICs, June 12– 16, 2016, Prague, Czech, p. 59
[11] Kobayashi Y, Ohse N and Morimoto T 2017 Proceeding of the International Electron Devices Meeting, December 2–6, 2017, San Francisco, CA, USA, p. 9.1.1
[12] Kobayashi Y, Ishimori H and Kinoshita A, et al. 2017 Jpn. J. Appl. Phys. 56 04CR08
[13] Tanaka H, Hayashi T and Shimoida Y, et al. 2005 Proceeding of the 17th International Symposium on Power Semiconductor Devices and ICs, May 23–26, 2005, Santa Barbara, CA, USA, p. 287
[14] Wu J, Huang H, Yi B, Hu H and Chen X B 2019 IEEE Journal of the Electron Devices Society 7 1013
[15] An J J and Hu S D 2019 IET Power Electronics 12 1981
[16] Ni W, Emori K and Marui T 2014 Mater. Sci. Forum 778–780 923
[17] Kagawa Y, Fujiwara N, Sugawara K, et al. 2014 Mater. Sci. Forum 778–780 919
[18] Kobayashi Y, Kinoshita A and Onishi Y 2016 FUJI Elect. Rev. 62 12
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