Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

doi:10.1088/1674-1056/26/10/108201

Abstract The growth process of GeO_x films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge⁴⁺ states, a mixture of the Ge²⁺ and Ge³⁺ states, and the Ge¹⁺ states are localized from the GeO_x surface to the GeO_x/Ge interface. Moreover, the Ge¹⁺ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeO_x layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices.

Keywords: Ge plasma post-oxidation MOS XPS

Received: 01 April 2017
Revised: 15 June 2017
Accepted manuscript online:

PACS:	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
	81.65.Mq	(Oxidation)
	52.77.Dq	(Plasma-based ion implantation and deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

Corresponding Authors: Jing Zhang, Jing Zhang
E-mail: zhangj@ncut.edu.cn;wangxiaolei@ime.ac.cn

Cite this article:

Zhiqian Zhao(赵治乾), Jing Zhang(张静), Xiaolei Wang(王晓磊), Shuhua Wei(魏淑华), Chao Zhao(赵超), Wenwu Wang(王文武) Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation 2017 Chin. Phys. B 26 108201

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Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

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Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation