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Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content |
| Lin Zhou(周琳)1, Lu Liu(刘璐)1, Yu-Heng Deng(邓煜恒)1, Chun-Xia Li(李春霞)2, Jing-Ping Xu(徐静平)1 |
1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Shenzhen Institute of Information Technology, Shenzhen 518172, China |
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Abstract High-quality dielectric/Ge interface and low gate leakage current are crucial issues for high-performance nanoscaled Ge-based complementary metal-oxide-semiconductor (CMOS) device. In this paper, the interfacial and electrical properties of high-k HfGdON/LaTaON stacked gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different gadolinium (Gd) contents are investigated. Experimental results show that when the controlling Gd content is a suitable value (e.g.,~13.16%), excellent device performances can be achieved:low interface-state density (6.93×1011 cm-2·eV-1), small flatband voltage (0.25 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.29×10-6 A/cm2 at Vg=Vfb + 1 V). These could be attributed to the repair of oxygen vacancies, the increase of conduction band offset, and the suppression of germanate and suboxide GeOx at/near the high k/Ge interface by doping suitable Gd into HfON.
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Received: 05 July 2019
Revised: 24 September 2019
Accepted manuscript online:
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PACS:
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77.55.D-
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77.55.dj
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(For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
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77.55.F-
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112). |
Corresponding Authors:
Jing-Ping Xu
E-mail: jpxu@hust.edu.cn
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Cite this article:
Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平) Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content 2019 Chin. Phys. B 28 127703
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