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Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation |
| Jiahao Yuan(袁嘉浩)1,2,†, Mengzhou Liao(廖梦舟)1,2,5,†, Zhiheng Huang(黄智恒)1,2, Jinpeng Tian(田金朋)1,2, Yanbang Chu(褚衍邦)1,2, Luojun Du(杜罗军)1, Wei Yang(杨威)1,2, Dongxia Shi(时东霞)1,2, Rong Yang(杨蓉)1,3,‡, and Guangyu Zhang(张广宇)1,2,4,§ |
1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Semiconductors(College of Integrated Circuits), Hunan University, Changsha 410082, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China;
5 Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Czech Republic |
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Abstract Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS2/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.
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Received: 06 April 2022
Revised: 11 May 2022
Accepted manuscript online: 23 May 2022
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PACS:
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73.43.Fj
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(Novel experimental methods; measurements)
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73.21.Cd
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(Superlattices)
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73.20.At
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(Surface states, band structure, electron density of states)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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| Fund: Project supported by the Natioanl Natural Science Foundation of China (Grant Nos. 62122084, 12074412, 61888102, and 11834017). |
Corresponding Authors:
Rong Yang, Guangyu Zhang
E-mail: ryang@iphy.ac.cn;gyzhang@iphy.ac.cn
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Cite this article:
Jiahao Yuan(袁嘉浩), Mengzhou Liao(廖梦舟), Zhiheng Huang(黄智恒), Jinpeng Tian(田金朋), Yanbang Chu(褚衍邦), Luojun Du(杜罗军), Wei Yang(杨威), Dongxia Shi(时东霞), Rong Yang(杨蓉), and Guangyu Zhang(张广宇) Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation 2022 Chin. Phys. B 31 087302
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