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Chin. Phys. B, 2010, Vol. 19(4): 047204    DOI: 10.1088/1674-1056/19/4/047204
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study of a 4H-SiC epitaxial n-channel MOSFET

Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门)
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.
Keywords:  SiC      epitaxial layer      MOSFET      mobility  
Received:  13 July 2009      Revised:  25 July 2009      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No.~60876061) and Advanced Research Foundation (Grant No.~51308040302).

Cite this article: 

Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门) Study of a 4H-SiC epitaxial n-channel MOSFET 2010 Chin. Phys. B 19 047204

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