A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

doi:10.1088/1674-1056/21/4/048502

Abstract The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.

Keywords: avalanche current path unclamped inductive switching superjunction MOSFET

Received: 19 August 2011
Revised: 02 October 2011
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005).

Corresponding Authors: Ren Min,renmin@uestc.edu.cn
E-mail: renmin@uestc.edu.cn

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Ren Min(任敏), Li Ze-Hong(李泽宏), Deng Guang-Min(邓光敏), Zhang Ling-Xia(张灵霞), Zhang Meng(张蒙), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), and Zhang Bo(张波) A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching 2012 Chin. Phys. B 21 048502

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A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

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