Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

doi:10.1088/1674-1056/19/11/117307

Abstract This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

Keywords: CMOS devices displacement damage heavy ion irradiation gamma ray irradiation

Received: 07 February 2010
Revised: 15 April 2010
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grants No. 60625403, 60836004, 60925015 and 90207004), and the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701).

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Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴) Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation 2010 Chin. Phys. B 19 117307

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Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

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