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Chin. Phys. B, 2010, Vol. 19(3): 037201    DOI: 10.1088/1674-1056/19/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊)
School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ($\bar{\tau}_{\rm c}/\bar{\tau}_{\rm e}$) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.
Keywords:  trap      RTS noise      nano-MOSFETs  
Received:  29 May 2009      Revised:  01 July 2009      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.23.Hk (Coulomb blockade; single-electron tunneling)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  

Cite this article: 

Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊) Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs 2010 Chin. Phys. B 19 037201

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