Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

doi:10.1088/1674-1056/19/3/037201

Abstract This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio (

{\bar{τ}}_{c} / {\bar{τ}}_{e}

) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

Keywords: trap RTS noise nano-MOSFETs

Received: 29 May 2009
Revised: 01 July 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	73.23.Hk	(Coulomb blockade; single-electron tunneling)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Cite this article:

Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊) Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs 2010 Chin. Phys. B 19 037201

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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

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