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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs |
Ma Zhong-Fa(马中发)†, Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊) |
School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ($\bar{\tau}_{\rm c}/\bar{\tau}_{\rm e}$) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.
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Received: 29 May 2009
Revised: 01 July 2009
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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73.23.Hk
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(Coulomb blockade; single-electron tunneling)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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Cite this article:
Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊) Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs 2010 Chin. Phys. B 19 037201
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