Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics

doi:10.1088/1674-1056/ab50fe

Abstract NH₃-plasma treatment is used to improve the quality of the gate dielectric and interface. Al₂O₃ is adopted as a buffer layer between HfO₂ and MoS₂ to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C-V and I-V characteristics are compared. It is found that the Al₂O₃/HfO₂ back-gate transistor with NH₃-plasma treatment shows the best electrical performance:high on-off current ratio of 1.53×10⁷, higher field-effect mobility of 26.51 cm²/V…, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH₃-plasma treatment and the addition of Al₂O₃ as a buffer layer.

Keywords: MoS₂ transistor high-k dielectric NH₃-plasma treatment oxygen vacancy mobility

Received: 24 June 2019
Revised: 27 September 2019
Accepted manuscript online:

PACS:	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
	81.65.-b	(Surface treatments)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61774064).

Corresponding Authors: Jing-Ping Xu
E-mail: jpxu@hust.edu.cn

Cite this article:

Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平) Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics 2019 Chin. Phys. B 28 128101

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Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics

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Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics