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Pressure-mediated contact quality improvement between monolayer MoS2 and graphite |
| Mengzhou Liao(廖梦舟)1,2, Luojun Du(杜罗军)1,2,6, Tingting Zhang(张婷婷)1,2,3, Lin Gu(谷林)1,2, Yugui Yao(姚裕贵)3, Rong Yang(杨蓉)1,2,4, Dongxia Shi(时东霞)1,2,4, Guangyu Zhang(张广宇)1,2,4,5 |
1 CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelecentronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland |
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Abstract Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS2 is significantly improved. This pressure-mediated contact quality improvement between MoS2 and graphite comes from the enhanced charge transfer between MoS2 and graphite when MoS2 is stretched. Our results provide a new way to enhance the contact quality between MoS2 and graphite for further applications.
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Received: 18 October 2018
Revised: 11 November 2018
Accepted manuscript online:
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PACS:
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73.43.Fj
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(Novel experimental methods; measurements)
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73.50.-h
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(Electronic transport phenomena in thin films)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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| Fund: Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289). |
Corresponding Authors:
Dongxia Shi, Guangyu Zhang
E-mail: dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn
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Cite this article:
Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇) Pressure-mediated contact quality improvement between monolayer MoS2 and graphite 2019 Chin. Phys. B 28 017301
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