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Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)
Chin. Phys. B, 2016, 25 (4):
047102.
DOI: 10.1088/1674-1056/25/4/047102
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages (BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances (Ron-sp) are 2.1 mΩ ·cm2, 7.34 mΩ·cm2, and 30.3 mΩ·cm2, respectively.
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