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Chin. Phys. B, 2016, Vol. 25(4): 047304    DOI: 10.1088/1674-1056/25/4/047304

Study on electrical defects level in single layer two-dimensional Ta2O5

Dahai Li(李大海)1, Xiongfei Song(宋雄飞)2, Linfeng Hu(胡林峰)3, Ziyi Wang(王子仪)1, Rongjun Zhang(张荣君)1, Liangyao Chen(陈良尧)1, David Wei Zhang(张卫)2, Peng Zhou(周鹏)2
1 Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China;
2 ASIC & System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai 200433, China;
3 Department of Materials Science and Engineering, Fudan University, Shanghai 200433, China

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.

Keywords:  single layer      electronic defects      spectroscopic ellipsometry  
Received:  30 July 2015      Revised:  11 January 2016      Accepted manuscript online: 
PACS:  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.20.Hb (Impurity and defect levels; energy states of adsorbed species)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  

Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

Corresponding Authors:  Rongjun Zhang, Peng Zhou     E-mail:;

Cite this article: 

Dahai Li(李大海), Xiongfei Song(宋雄飞), Linfeng Hu(胡林峰), Ziyi Wang(王子仪), Rongjun Zhang(张荣君), Liangyao Chen(陈良尧), David Wei Zhang(张卫), Peng Zhou(周鹏) Study on electrical defects level in single layer two-dimensional Ta2O5 2016 Chin. Phys. B 25 047304

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