Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

doi:10.1088/1674-1056/25/4/048501

Abstract In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1×0.2×16 μm² SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.

Keywords: temperature dependence model parameter SiGe HBT HICUM

Received: 04 November 2015
Revised: 29 December 2015
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported partially by the Important National Science & Technology Specific Projects, China (Grant No. 2013ZX02503003).

Corresponding Authors: Jun Fu
E-mail: fujun@tsinghua.edu.cn

Cite this article:

Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘) Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model 2016 Chin. Phys. B 25 048501

[1]	Sun Y B, Fu J, Xu J, Wang Y D, Zhou W and Zhang W 2014 Chin. Phys. B 23 116104
[2]	Sun Y B, Fu J, Xu J, Wang Y D, Zhou W and Zhang W 2013 Acta Phys. Sin. 62 196104 (in Chinese)
[3]	Cressler J D 2010 IEEE Trans. Dev. Mater. Rel. 10 437
[4]	Cui Y, Niu G F, Shi Y, Zhu C D, Najafizadeh L, Cressler J D and Joseph A 2006 IEEE Bipolar/BiCMOS Circuits Technol. Meeting, p. 1
[5]	Bhaskar B, Venkataraman S, Yuan L, Liang Q, Lee C, Nuttinck S, Dekhyuon H, Chen Y, Cressler J D, Laskar J, Freeman G and Ahlgren D C 2005 IEEE Trans. Electron Dev. 4 585
[6]	Chen T, Kuo W L, Zhao E, Liang Q, Jin Z, Cressler J D and Joseph A J 2004 IEEE Trans. Electron Dev. 11 1825
[7]	Thomas D B, Najafizadeh L, Cressler J D, Moen K A and Lourenco N 2011 Solid-State Electron. 56 47
[8]	Yuan J, Cressler J D, Krithivasan R, Thrivikraman T, Khater M H, Ahlgren D C, Joseph A J and Rieh J 2009 IEEE Trans. Electron Dev. 56 1007
[9]	Cressler J D and Niu G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House)
[10]	Schrer M and Chakravorty A 2010 Compact hierarchical modeling of bipolar transistors with HICUM (Singapore: World Scientific)
[11]	Raya C, Schwartzmann T, Chevalier P, Pourchon F, Celi D and Zimmer T 2007 IEEE Bipolar/BiCMOS Circuits Technol. Meeting, p. 188
[12]	Basaran U and Berroth M 2003 IEEE Bipolar/BiCMOS Circuits Technol. Meeting, p. 93
[13]	Gabl R and Reisch M 1998 IEEE Trans. Electron Dev. 12 2457
[14]	Yang J, Fu J, Sun Y B, Wang Y D, Zhou W and Zhang W 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, Chengdu, China, p. 1
[15]	Sun Y B, Fu J, Yang J, Wang Y D, Zhou W and Zhang W 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, Guilin, China, p. 1
[16]	Schroter M and Mukherjee A 2008 HICUM-A Geometry Scalable Physics-Based Compact Bipolar Transistor Model, Documentation of model level 2 version 2.23, University of Technology Dresden, Germany

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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

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