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Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse |
| Xiao-Wen Xi(席晓文)1, Chang-Chun Chai(柴常春)1, Gang Zhao(赵刚)2, Yin-Tang Yang(杨银堂)1, Xin-Hai Yu(于新海)1, Yang Liu(刘阳)1 |
1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China;
2 Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China |
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Abstract The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.
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Received: 26 October 2015
Revised: 06 December 2015
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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| Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K). |
Corresponding Authors:
Xiao-Wen Xi
E-mail: xixw841003@163.com
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Cite this article:
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳) Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse 2016 Chin. Phys. B 25 048503
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