Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

doi:10.1088/1674-1056/25/4/049401

Abstract Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications.

Keywords: body-biasing SET pulse quenching charge sharing bulk FinFET process

Received: 06 September 2015
Revised: 25 October 2015
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

Corresponding Authors: Shu-Ming Chen
E-mail: smchen_cs@163.com

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Jun-Ting Yu(于俊庭), Shu-Ming Chen(陈书明), Jian-Jun Chen(陈建军), Peng-Cheng Huang(黄鹏程), Rui-Qiang Song(宋睿强) Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process 2016 Chin. Phys. B 25 049401

[1]	Colinge J P 2008 FinFETs and Other Multi-Gate Transistors (New York: Springer) pp. 52-56
[2]	Fossum J G and Trivedl V P 2013 Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs (New York: Cambridge University Press) pp. 33-35
[3]	Online available:http://www.eetimes.com/electronics-news/4215729/Intel-to-use-tri-gate-transistors-at-22-nm
[4]	Ahlbin J R, Massengill L W, Bhuva B L, Narasimham B, Gadlage M J and Eaton P H 2009 IEEE Trans. Nucl. Sci. 58 3050
[5]	Cavrois V F, Massengill L W and Gouker P 2013 IEEE Trans. Nucl. Sci. 60 1767
[6]	Huang P C, Chen S M, Chen J J, Liang B and Liu B W 2014 IEEE Trans. Dev. Mater. Rel. 14 849
[7]	Atkinson N M, Witulski A F, Holman W T, Ahlbin J R, Bhuva B L and Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 885
[8]	Du Y K, Chen S M and Liu B W 2013 Microelectronics Journal 44 65
[9]	Ahlbin J R, Gadlage M J, Ball D R, Witulski A W, Bhuva B L, Reed R A, Vizkelethy G and Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 3380
[10]	Qin J R, Chen S M, Liang B, Ge Z, He Y B, Du Y K, Liu B W, Chen J J and Li D W 2014 IEEE Trans. Dev. Mater. Rel. 14 139
[11]	Qin J R, Chen S M, Guo C G and Du Y K 2014 IEEE Trans. Dev. Mater. Rel. 14 639
[12]	Huang P C, Chen S M, Liang Z F, Chen J J, Hu C M and He Y B 2014 Chin. Sci. Bull. 59 2850
[13]	Amusan O A, Witulski A F, Massengill L W, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D and Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[14]	Artola L, Gaillardin M, Hubert G, Raine M and Paillet P 2015 IEEE Trans. Nucl. Sci. 62 1528
[15]	Tschanz J W, Kao J T, Narendra S G, Nair R, Antoniadis D A, Chandrakasan A P and De V 2002 IEEE Journal of Solid-State Circuits 37 1396
[16]	Sachid A B, Khandelwal S and Hu C M 2014 Proc. Technical Program -International Symposium on VLSI-TSA, April 28-30, 2014, Hsinchu, p. 1
[17]	Zhang K Y, Manzawa Y and Kobayashi K 2014 IEEE Proc. IRPS, June 1-5, Waikoloa, HI, p. SE.2.1
[18]	Garg R and Khatri P S 2009 IEEE Proc. ICCD, October 4-7, 2009, Lake Tahoe, CA, p. 498
[19]	Casey M C, Bhuva B L, Nation S A, Amusan O A, Loveless T D, Massengill L W, McMorrow D and Melinger J S 2009 IEEE Proc. IRPS, April 26-30, Montreal, QC, p. 194
[20]	Qin J R, Chen S M and Chen J J 2012 Sci. China-Tech. Sci. 55 1576
[21]	Yu J T, Chen S M, Chen J J and Huang P C 2015 Chin. Phys. B 24 119401
[22]	Neamen D A 2003 Semiconductor Physics and Devices Basic Principles, 3th edn. (Beijing: Publishing House of Electronics Industry) pp. 263-265 (in Chinese)

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Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

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