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20501 |
Chuanjin Zu(祖传金) and Xiangyang Yu(余向阳) |
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Memory effect in time fractional Schrödinger equation |
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Chin. Phys. B
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128504 |
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Ferroelectric domain wall memory |
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Chin. Phys. B
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120304 |
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Performance of entanglement-assisted quantum codes with noisy ebits over asymmetric and memory channels |
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Chin. Phys. B
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127508 |
M Al Bahri, M Al Hinaai, and T Al Harthy |
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Multi-segmented nanowires for vortex magnetic domain wall racetrack memory |
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Chin. Phys. B
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110502 |
Kaibang Wu(吴凯邦), Jiayan Liu(刘嘉言), Shijie Liu(刘仕洁), Feng Wang(王丰), Lai Wei(魏来), Qibin Luan(栾其斌), and Zheng-Xiong Wang(王正汹) |
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Analysis of anomalous transport with temporal fractional transport equations in a bounded domain |
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Chin. Phys. B
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108505 |
Ben Wu(吴奔), Tao Wei(魏涛), Jing Hu(胡敬), Ruirui Wang(王瑞瑞), Qianqian Liu(刘倩倩), Miao Cheng(程淼), Wanfei Li(李宛飞), Yun Ling(凌云), and Bo Liu(刘波) |
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Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed |
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Chin. Phys. B
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96102 |
Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰) |
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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement |
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Chin. Phys. B
2023 Vol.32 (9): 96102-096102
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87305 |
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Electric modulation of anisotropic magnetoresistance in Pt/HfO2-x/NiOy/Ni heterojunctions |
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Chin. Phys. B
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74206 |
Xingchang Wang(王兴昌), Jianmin Wang(王建民), Ying Zuo(左瀛), Liang Dong(董亮), Georgios A Siviloglou, and Jiefei Chen(陈洁菲) |
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Thermometry utilizing stored short-wavelength spin waves in cold atomic ensembles |
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Chin. Phys. B
2023 Vol.32 (7): 74206-074206
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67505 |
Yuan Yuan(袁源), Lu-Jun Wei(魏陆军), Yu Lu(卢羽), Ruo-Bai Liu(刘若柏), Tian-Yu Liu(刘天宇), Jia-Rui Chen(陈家瑞), Biao You(游彪), Wei Zhang(张维), Di Wu(吴镝), and Jun Du(杜军) |
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Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization |
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Chin. Phys. B
2023 Vol.32 (6): 67505-067505
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34303 |
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Tunable topological interface states and resonance states of surface waves based on the shape memory alloy |
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Chin. Phys. B
2023 Vol.32 (3): 34303-034303
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20705 |
Biao Pei(裴标), Zhixin Tan(谭志新), Yongning He(贺永宁), Xiaolong Zhao(赵小龙), and Ruirui Fan(樊瑞睿) |
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Direct measurement of an energy-dependent single-event-upset cross-section with time-of-flight method at CSNS |
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Chin. Phys. B
2023 Vol.32 (2): 20705-020705
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18502 |
Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌) |
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High throughput N-modular redundancy for error correction design of memristive stateful logic |
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Chin. Phys. B
2023 Vol.32 (1): 18502-018502
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18503 |
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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack |
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Chin. Phys. B
2023 Vol.32 (1): 18503-018503
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80701 |
Tong-Bao Zhang(张同宝), Hui-Jian Liang(梁慧剑),Shi-Guang Wang(王时光), and Chen-Guang Ouyang(欧阳晨光) |
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Ionospheric vertical total electron content prediction model in low-latitude regions based on long short-term memory neural network |
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Chin. Phys. B
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60501 |
Shaobo He(贺少波), Huihai Wang(王会海), and Kehui Sun(孙克辉) |
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Solutions and memory effect of fractional-order chaotic system: A review |
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Chin. Phys. B
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56105 |
Chun-Mei Li(李春梅), Shun-Jie Yang(杨顺杰), and Jin-Ping Zhou(周金萍) |
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Alloying and magnetic disordering effects on phase stability of Co2 YGa (Y=Cr, V, and Ni) alloys: A first-principles study |
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Chin. Phys. B
2022 Vol.31 (5): 56105-056105
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40502 |
Zhong-Yu Li(李中昱), Hong-Xia Ge(葛红霞), and Rong-Jun Cheng(程荣军) |
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Traffic flow prediction based on BILSTM model and data denoising scheme |
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2022 Vol.31 (4): 40502-040502
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24703 |
Jianzhuo Zhu(朱键卓), Xinyu Zhang(张鑫宇), Xingyuan Li(李兴元), and Qiuming Peng(彭秋明) |
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Molecular dynamics simulations on the wet/dry self-latching and electric fields triggered wet/dry transitions between nanosheets: A non-volatile memory nanostructure |
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Chin. Phys. B
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Congzhi Wu(武聪智), Hongxia Ge(葛红霞), and Rongjun Cheng(程荣军) |
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An extended smart driver model considering electronic throttle angle changes with memory |
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Chin. Phys. B
2022 Vol.31 (1): 10504-010504
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Jin-Long Jiao(焦金龙), Qiu-Hong Gan(甘秋宏), Shi Cheng(程实), Ye Liao(廖晔), Shao-Ying Ke(柯少颖), Wei Huang(黄巍), Jian-Yuan Wang(汪建元), Cheng Li(李成), and Song-Yan Chen(陈松岩) |
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Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device |
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Chin. Phys. B
2021 Vol.30 (11): 118701-118701
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86801 |
Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才) |
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Effect of Mo doping on phase change performance of Sb2Te3 |
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Chin. Phys. B
2021 Vol.30 (8): 86801-086801
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68402 |
Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚) |
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SBT-memristor-based crossbar memory circuit |
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Chin. Phys. B
2021 Vol.30 (6): 68402-068402
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60305 |
Xian-Ke Li(李咸柯), Xiao-Qian Song(宋小谦), Qi-Wei Guo(郭其伟), Xing-Yu Zhou(周星宇), and Qin Wang(王琴) |
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Practical decoy-state BB84 quantum key distribution with quantum memory |
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Chin. Phys. B
2021 Vol.30 (6): 60305-060305
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60303 |
Shexiang Jiang(蒋社想), Bao Zhao(赵宝), and Xingzhu Liang(梁兴柱) |
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Controlled quantum teleportation of an unknown single-qutrit state in noisy channels with memory |
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Chin. Phys. B
2021 Vol.30 (6): 60303-060303
[Abstract]
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58504 |
Bo Liu(刘波), Tao Wei(魏涛), Jing Hu(胡敬), Wanfei Li(李宛飞), Yun Ling(凌云), Qianqian Liu(刘倩倩), Miao Cheng(程淼), and Zhitang Song(宋志棠) |
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Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage |
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Chin. Phys. B
2021 Vol.30 (5): 58504-058504
[Abstract]
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58702 |
Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明) |
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Resistive switching memory for high density storage and computing |
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Chin. Phys. B
2021 Vol.30 (5): 58702-058702
[Abstract]
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47302 |
Zhuang-Zhuang Li(李壮壮), Zi-Yang Yan(严梓洋), Jia-Qi Xu(许嘉琪), Xiao-Han Zhang(张晓晗), Jing-Bo Fan(凡井波), Ya Lin(林亚), and Zhong-Qiang Wang(王中强) |
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Flexible and degradable resistive switching memory fabricated with sodium alginate |
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Chin. Phys. B
2021 Vol.30 (4): 47302-
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47303 |
Guihua Zhao(赵贵华), Li Wang(王力), Xi Ke(柯曦), and Zhiyi Yu(虞志益) |
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Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials |
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Chin. Phys. B
2021 Vol.30 (4): 47303-
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30308 |
Ming-Liang Hu(胡明亮), Yu-Han Zhang(张宇晗), and Heng Fan(范桁) |
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Nonlocal advantage of quantum coherence in a dephasing channel with memory |
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Chin. Phys. B
2021 Vol.30 (3): 30308-
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18101 |
Shuai Ren(任帅), Chang Liu(刘畅), and Wei-Hua Wang(汪卫华) |
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High temperature strain glass in Ti-Au and Ti-Pt based shape memory alloys |
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Chin. Phys. B
2021 Vol.30 (1): 18101-
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16103 |
Li-Ping Fu(傅丽萍), Xiao-Qiang Song(宋小强), Xiao-Ping Gao(高晓平), Ze-Wei Wu(吴泽伟), Si-Kai Chen(陈思凯), and Ying-Tao Li(李颖弢) |
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TiOx-based self-rectifying memory device for crossbar WORM memory array applications |
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Chin. Phys. B
2021 Vol.30 (1): 16103-
[Abstract]
(441)
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110307 |
Mei-Jiao Wang(王美姣), Yun-Jie Xia(夏云杰), Yang Yang(杨阳), Liao-Zhen Cao(曹连振), Qin-Wei Zhang(张钦伟), Ying-De Li(李英德), and Jia-Qiang Zhao(赵加强) |
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Protecting the entanglement of two-qubit over quantum channels with memory via weak measurement and quantum measurement reversal |
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Chin. Phys. B
2020 Vol.29 (11): 110307-
[Abstract]
(359)
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78504 |
Xiaohe Huang(黄晓合), Chunsen Liu(刘春森), Yu-Gang Jiang(姜育刚), Peng Zhou(周鹏) |
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In-memory computing to break the memory wall |
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Chin. Phys. B
2020 Vol.29 (7): 78504-078504
[Abstract]
(1080)
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47701 |
Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威) |
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Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands |
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Chin. Phys. B
2020 Vol.29 (4): 47701-047701
[Abstract]
(561)
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(117)
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40701 |
Siying Chen(陈偲颖), Hongxing Liu(刘红星) |
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Preliminary abnormal electrocardiogram segment screening method for Holter data based on long short-term memory networks |
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Chin. Phys. B
2020 Vol.29 (4): 40701-040701
[Abstract]
(611)
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106802 |
Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵) |
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Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer |
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Chin. Phys. B
2019 Vol.28 (10): 106802-106802
[Abstract]
(598)
[HTML 1 KB]
[PDF 3326 KB]
(251)
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104202 |
Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌) |
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Unconventional phase transition of phase-change-memory materials for optical data storage |
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Chin. Phys. B
2019 Vol.28 (10): 104202-104202
[Abstract]
(768)
[HTML 1 KB]
[PDF 6399 KB]
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86801 |
Wen-Ting Zhang(张文婷), Fen-Xia Wang(王粉霞), Yu-Miao Li(李玉苗), Xiao-Xing Guo(郭小星), Jian-Hong Yang(杨建红) |
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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer |
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Chin. Phys. B
2019 Vol.28 (8): 86801-086801
[Abstract]
(523)
[HTML 1 KB]
[PDF 850 KB]
(108)
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70303 |
Juju Hu(胡菊菊), Qin Xue(薛琴) |
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Influence of homodyne-based feedback control on the entropic uncertainty in open quantum system |
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Chin. Phys. B
2019 Vol.28 (7): 70303-070303
[Abstract]
(620)
[HTML 1 KB]
[PDF 524 KB]
(148)
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74207 |
Ming Li(李明), Long-Jie Fang(方龙杰), Lin Pang(庞霖) |
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Memory effect evaluation based on transmission matrix calculation |
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Chin. Phys. B
2019 Vol.28 (7): 74207-074207
[Abstract]
(762)
[HTML 1 KB]
[PDF 3068 KB]
(131)
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118501 |
Jing Liu(刘璟), Xiaoxin Xu(许晓欣), Chuanbing Chen(陈传兵), Tiancheng Gong(龚天成), Zhaoan Yu(余兆安), Qing Luo(罗庆), Peng Yuan(袁鹏), Danian Dong(董大年), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Analysis of tail bits generation of multilevel storage in resistive switching memory |
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Chin. Phys. B
2018 Vol.27 (11): 118501-118501
[Abstract]
(596)
[HTML 1 KB]
[PDF 1793 KB]
(192)
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106501 |
Min Zhou(周敏), Yu-Shuang Li(李玉霜), Chen Zhang(张晨), Lai-Feng Li(李来风) |
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Elastocaloric effect and mechanical behavior for NiTi shape memory alloys |
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Chin. Phys. B
2018 Vol.27 (10): 106501-106501
[Abstract]
(598)
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[PDF 963 KB]
(193)
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100302 |
Ying-Hua Ji(嵇英华), Qiang Ke(柯强), Ju-Ju Hu(胡菊菊) |
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Controlling of entropic uncertainty in open quantum system via proper placement of quantum register |
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Chin. Phys. B
2018 Vol.27 (10): 100302-100302
[Abstract]
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[PDF 945 KB]
(149)
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98501 |
Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明) |
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Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory |
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Chin. Phys. B
2018 Vol.27 (9): 98501-098501
[Abstract]
(651)
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(186)
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87701 |
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) |
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High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer |
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Chin. Phys. B
2018 Vol.27 (8): 87701-087701
[Abstract]
(785)
[HTML 1 KB]
[PDF 2296 KB]
(197)
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76101 |
Jie Luo(罗捷), Tie-shan Wang(王铁山), Dong-qing Li(李东青), Tian-qi Liu(刘天奇), Ming-dong Hou(侯明东), You-mei Sun(孙友梅), Jing-lai Duan(段敬来), Hui-jun Yao(姚会军), Kai Xi(习凯), Bing Ye(叶兵), Jie Liu(刘杰) |
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Investigation of flux dependent sensitivity on single event effect in memory devices |
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Chin. Phys. B
2018 Vol.27 (7): 76101-076101
[Abstract]
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[PDF 1369 KB]
(213)
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67303 |
Chen Wang(王尘), Yi-Hong Xu(许怡红), Song-Yan Chen(陈松岩), Cheng Li(李成), Jian-Yuan Wang(汪建元), Wei Huang(黄巍), Hong-Kai Lai(赖虹凯), Rong-Rong Guo(郭榕榕) |
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Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer |
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Chin. Phys. B
2018 Vol.27 (6): 67303-067303
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60302 |
Wei Wu(吴薇), Xin Liu(刘辛), Chao Wang(王超) |
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Quantum speed-up capacity in different types of quantum channels for two-qubit open systems |
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Chin. Phys. B
2018 Vol.27 (6): 60302-060302
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54206 |
Ming-Xia Li(厉鸣夏), Jie Yang(杨洁), Gong-Wei Lin(林功伟), Yue-Ping Niu(钮月萍), Shang-Qing Gong(龚尚庆) |
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Scattering of a single photon in a one-dimensional coupled resonator waveguide with a Λ-type emitter assisted by an additional cavity |
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Chin. Phys. B
2018 Vol.27 (5): 54206-054206
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38901 |
Yi Ma(马毅), Eric Wai Ming Lee(李伟民), Meng Shi(施朦), Richard Kwok Kit Yuen(袁国杰) |
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Spatial memory enhances the evacuation efficiency of virtual pedestrians under poor visibility condition |
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Chin. Phys. B
2018 Vol.27 (3): 38901-038901
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20303 |
Yi-Lin Hua(华怡林), Zong-Quan Zhou(周宗权), Chuan-Feng Li(李传锋), Guang-Can Guo(郭光灿) |
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Quantum light storage in rare-earth-ion-doped solids |
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Chin. Phys. B
2018 Vol.27 (2): 20303-020303
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118501 |
Nan Shao(邵楠), Sheng-Bing Zhang(张盛兵), Shu-Yuan Shao(邵舒渊) |
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A phenomenological memristor model for synaptic memory and learning behaviors |
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Chin. Phys. B
2017 Vol.26 (11): 118501-118501
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96103 |
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) |
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin |
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Chin. Phys. B
2017 Vol.26 (9): 96103-096103
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90303 |
Bo-Yang Liu(刘博阳), Wei Cui(崔巍), Hong-Yi Dai(戴宏毅), Xi Chen(陈希), Ming Zhang(张明) |
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A high-fidelity memory scheme for quantum data buses |
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Chin. Phys. B
2017 Vol.26 (9): 90303-090303
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96102 |
Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉) |
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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory |
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Chin. Phys. B
2017 Vol.26 (9): 96102-096102
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87305 |
Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲) |
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Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers |
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Chin. Phys. B
2017 Vol.26 (8): 87305-087305
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56103 |
Xiao-Hang Zheng(郑晓航), Jie-He Sui(隋解和), Zhe-Yi Yang(杨哲一), Guo-Zhang Zhi(张治国), Wei Cai(蔡伟) |
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Effect of thermo-mechanical process on structure and high temperature shape memory properties of Ti-15Ta-15Zr alloy |
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Chin. Phys. B
2017 Vol.26 (5): 56103-056103
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36501 |
Xiao-Hua Luo(罗小华), Wei-Jun Ren(任卫军), Wei Jin(金伟), Zhi-Dong Zhang(张志东) |
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Large elastocaloric effect in Ti-Ni shape memory alloy below austenite finish temperature |
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Chin. Phys. B
2017 Vol.26 (3): 36501-036501
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33201 |
Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏) |
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Atomic crystals resistive switching memory |
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Chin. Phys. B
2017 Vol.26 (3): 33201-033201
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38501 |
Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令) |
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Graphene resistive random memory–the promising memory device in next generation |
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Chin. Phys. B
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18502 |
Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋) |
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Random telegraph noise on the threshold voltage of multi-level flash memory |
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Chin. Phys. B
2017 Vol.26 (1): 18502-018502
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120701 |
Yu-Jiao Huang(黄玉娇), Xiao-Yan Wang(汪晓妍), Hai-Xia Long(龙海霞), Xu-Hua Yang(杨旭华) |
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Synthesization of high-capacity auto-associative memories using complex-valued neural networks |
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Chin. Phys. B
2016 Vol.25 (12): 120701-120701
[Abstract]
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107302 |
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮) |
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Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer |
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Chin. Phys. B
2016 Vol.25 (10): 107302-107302
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106102 |
Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢) |
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Self-compliance multilevel storage characteristic in HfO2-based device |
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Chin. Phys. B
2016 Vol.25 (10): 106102-106102
[Abstract]
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97304 |
Jie Yu(于杰), Kun-ji Chen(陈坤基), Zhong-yuan Ma(马忠元), Xin-xin Zhang(张鑫鑫), Xiao-fan Jiang(江小帆), Yang-qing Wu(吴仰晴), Xin-fan Huang(黄信凡), Shunri Oda |
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Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices |
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Chin. Phys. B
2016 Vol.25 (9): 97304-097304
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96109 |
Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明) |
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Pattern dependence in synergistic effects of total dose onsingle-event upset hardness |
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Chin. Phys. B
2016 Vol.25 (9): 96109-096109
[Abstract]
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87503 |
Fen Wang(王芬), Shi-Peng Shen(申世鹏), Young Sun(孙阳) |
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Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe12O22 |
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Chin. Phys. B
2016 Vol.25 (8): 87503-087503
[Abstract]
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88502 |
Zhi-Yuan Lun(伦志远), Yun Li(李云), Kai Zhao(赵凯), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦), Yi Wang(王漪) |
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Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level |
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Chin. Phys. B
2016 Vol.25 (8): 88502-088502
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67102 |
Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红) |
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Numerical simulation study of organic nonvolatile memory with polysilicon floating gate |
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Chin. Phys. B
2016 Vol.25 (6): 67102-067102
[Abstract]
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56501 |
Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array |
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Chin. Phys. B
2016 Vol.25 (5): 56501-056501
[Abstract]
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[PDF 1729 KB]
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126201 |
Wang Li-Ying (王立英), Dai Xue-Fang (代学芳), Wang Xiao-Tian (王啸天), Lin Ting-Ting (林婷婷), Chen Lei (陈磊), Liu Ran (刘然), Cui Yu-Ting (崔玉亭), Liu Guo-Dong (刘国栋) |
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Electronic structures and magnetisms of the Co2TiSb1-xSnx (x=0, 0.25, 0.5) Heusler alloys: A theoretical study of the shape-memory behavior |
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Chin. Phys. B
2015 Vol.24 (12): 126201-126201
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116102 |
Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas |
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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction |
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Chin. Phys. B
2015 Vol.24 (11): 116102-116102
[Abstract]
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107705 |
Lu Zeng-Xing (芦增星), Song Xiao (宋骁), Zhao Li-Na (赵丽娜), Li Zhong-Wen (李忠文), Lin Yuan-Bin (林远彬), Zeng Min (曾敏), Zhang Zhang (张璋), Lu Xu-Bing (陆旭兵), Wu Su-Juan (吴素娟), Gao Xing-Sen (高兴森), Yan Zhi-Bo (严志波), Liu Jun-Ming (刘俊明) |
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Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films |
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Chin. Phys. B
2015 Vol.24 (10): 107705-107705
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106106 |
Zheng Qi-Wen (郑齐文), Cui Jiang-Wei (崔江维), Zhou Hang (周航), Yu De-Zhao (余德昭), Yu Xue-Feng (余学峰), Lu Wu (陆妩), Guo Qi (郭旗), Ren Di-Yuan (任迪远) |
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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation |
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Chin. Phys. B
2015 Vol.24 (10): 106106-106106
[Abstract]
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73101 |
Dai Yue-Hua (代月花), Chen Zhen (陈真), Jin Bo (金波), Li Ning (李宁), Li Xiao-Feng (李晓风) |
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Optimal migration path of Ag in HfO2: A first-principles study |
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Chin. Phys. B
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68401 |
Liang Yan (梁燕), Chen Hao (陈昊), Liu Hua-Jian (刘华建), Shi Jiao-Tong (石交通) |
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Generic meminductive characteristics ofswitched reluctance machines |
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Chin. Phys. B
2015 Vol.24 (6): 68401-068401
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66104 |
Hao Gang-Ling (郝刚领), Wang Xin-Fu (王新福), Wang Hui (王辉), Li Xian-Yu (李先雨) |
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Room temperature damping correlated to the microstructures in Cu-20.4Al-8.7Mn |
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Chin. Phys. B
2015 Vol.24 (6): 66104-066104
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[PDF 1172 KB]
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59801 |
Wang Zhi-Yun (汪志云), Chen Pei-Jie (陈培杰), Zhang Liang-Ying (张良英) |
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Resonant behavior of stochastic oscillations of general relativistic disks driven by a memory-damped friction |
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Chin. Phys. B
2015 Vol.24 (5): 59801-059801
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57702 |
Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) |
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Threshold switching uniformity in In2Se3 nanowire-based phase change memory |
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Chin. Phys. B
2015 Vol.24 (5): 57702-057702
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[PDF 684 KB]
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57502 |
Tan Chang-Long (谭昌龙), Zhang Kun (张琨), Tian Xiao-Hua (田晓华), Cai Wei (蔡伟) |
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Magnetic and mechanical properties of Ni–Mn–Ga/Fe–Ga ferromagnetic shape memory composite |
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Chin. Phys. B
2015 Vol.24 (5): 57502-057502
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[PDF 661 KB]
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37101 |
Wang Zhi-Qiang (王志强), Yan Zhi-Bo (颜志波), Qin Ming-Hui (秦明辉), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) |
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Dynamic resistive switching in a three-terminal device based on phase separated manganites |
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Chin. Phys. B
2015 Vol.24 (3): 37101-037101
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17305 |
Fang Zhong-Hui (方忠慧), Jiang Xiao-Fan (江小帆), Chen Kun-Ji (陈坤基), Wang Yue-Fei (王越飞), Li Wei (李伟), Xu Jun (徐骏) |
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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps |
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Chin. Phys. B
2015 Vol.24 (1): 17305-017305
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
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118503 |
Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明) |
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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 118503-118503
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[PDF 252 KB]
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106102 |
Zheng Qi-Wen (郑齐文), Yu Xue-Feng (余学峰), Cui Jiang-Wei (崔江维), Guo Qi (郭旗), Ren Di-Yuan (任迪远), Cong Zhong-Chao (丛忠超), Zhou Hang (周航) |
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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation |
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Chin. Phys. B
2014 Vol.23 (10): 106102-106102
[Abstract]
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[PDF 473 KB]
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88201 |
Zhu Zhi-Wen (竺致文), Zhang Qing-Xin (张庆昕), Xu Jia (许佳) |
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Nonlinear dynamic characteristics and optimal control of a giant magnetostrictive film-shaped memory alloy composite plate subjected to in-plane stochastic excitation |
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Chin. Phys. B
2014 Vol.23 (8): 88201-088201
[Abstract]
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[HTML 1 KB]
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88501 |
Chu Yu-Qiong (褚玉琼), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Liu Ming (刘明) |
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Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack |
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Chin. Phys. B
2014 Vol.23 (8): 88501-088501
[Abstract]
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[HTML 1 KB]
[PDF 364 KB]
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87804 |
Li Jun-Tao (李俊焘), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Ren Kun (任堃), Zhu Min (朱敏), Xu Jia (徐佳), Ren Jia-Dong (任佳栋), Feng Gao-Ming (冯高明), Ren Wan-Chun (任万春), Tong Hao (童浩) |
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Thermal effect of Ge2Sb2Te5 in phase change memory device |
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Chin. Phys. B
2014 Vol.23 (8): 87804-087804
[Abstract]
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[HTML 1 KB]
[PDF 3626 KB]
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87304 |
Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国) |
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Bipolar resistance switching in the fully transparent BaSnO3-based memory device |
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Chin. Phys. B
2014 Vol.23 (8): 87304-087304
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[HTML 1 KB]
[PDF 2175 KB]
(820)
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87301 |
Li Jun-Jian (李军建), Wang Guo-Xiang (王国祥), Chen Yi-Min (陈益敏), Shen Xiang (沈祥), Nie Qiu-Hua (聂秋华), Lü Ye-Gang (吕业刚), Dai Shi-Xun (戴世勋), Xu Tie-Feng (徐铁锋) |
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Phase transformation in Mg–Sb3Te thin films |
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Chin. Phys. B
2014 Vol.23 (8): 87301-087301
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[PDF 509 KB]
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77501 |
Liu Hou-Fang (刘厚方), Syed Shahbaz Ali, Han Xiu-Feng (韩秀峰) |
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Perpendicular magnetic tunnel junction and its application in magnetic random access memory |
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Chin. Phys. B
2014 Vol.23 (7): 77501-077501
[Abstract]
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[HTML 1 KB]
[PDF 2503 KB]
(3033)
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58501 |
Qiao Shi-Zhu (乔士柱), Kang Shi-Shou (康仕寿), Qin Yu-Feng (秦羽丰), Li Qiang (李强), Zhong Hai (钟海), Kang Yun (康韵), Yu Shu-Yun (于淑云), Han Guang-Bing (韩广兵), Yan Shi-Shen (颜世申), Mei Liang-Mo (梅良模) |
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Multi-polar resistance switching and memory effect in copper phthalocyanine junctions |
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Chin. Phys. B
2014 Vol.23 (5): 58501-058501
[Abstract]
(578)
[HTML 1 KB]
[PDF 1657 KB]
(531)
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46104 |
Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) |
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Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation |
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Chin. Phys. B
2014 Vol.23 (4): 46104-046104
[Abstract]
(773)
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(517)
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37504 |
Zhang Ya-Zhuo (张雅卓), Cao Jia-Mu (曹伽牧), Tan Chang-Long (谭昌龙), Cao Yi-Jiang (曹一江), Cai Wei (蔡伟) |
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Pressure effects on magnetic properties and martensitic transformation of Ni–Mn–Sn magnetic shape memory alloys |
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Chin. Phys. B
2014 Vol.23 (3): 37504-037504
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(530)
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(522)
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18101 |
Zheng Xiao-Hang (郑晓航), Sui Jie-He (隋解和), Zhang Xin (张欣), Yang Zhe-Yi (杨哲一), Cai Wei (蔡伟) |
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Thermal stability and high-temperature shape memory characteristics of Ti-20Zr-10Ta alloy |
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Chin. Phys. B
2014 Vol.23 (1): 18101-018101
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0 |
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Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(53)
[HTML 0 KB]
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(6)
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126201 |
Li Ge-Tian (李歌天), Liu Zhu-Hong (柳祝红), Meng Fan-Yan (孟凡研), Ma Xing-Qiao (马星桥), Wu Guang-Heng (吴光恒) |
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Effects of Cu on the martensitic transformation and magnetic properties of Mn50Ni40In10 alloy |
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Chin. Phys. B
2013 Vol.22 (12): 126201-126201
[Abstract]
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(503)
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124208 |
Lin Jin-Cheng (林金成), Long Guo-Yun (龙国云), Wang Yang (王阳), Wu Yi-Qun (吴谊群) |
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Polarization readout analysis for multilevel phase change recording by crystallization degree modulation |
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Chin. Phys. B
2013 Vol.22 (12): 124208-124208
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(544)
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[PDF 421 KB]
(365)
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117308 |
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) |
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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
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Chin. Phys. B
2013 Vol.22 (11): 117308-117308
[Abstract]
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[PDF 443 KB]
(435)
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107502 |
Xie Ren (谢忍), Tang Shao-Long (唐少龙), Tang Yan-Mei (唐妍梅), Liu Xiao-Chen (刘枭辰), Tang Tao (唐涛), Du You-Wei (都有为) |
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Transformation behaviors, structural and magnetic characteristics of Ni–Mn–Ga films on MgO (001) |
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Chin. Phys. B
2013 Vol.22 (10): 107502-107502
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(526)
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97701 |
Tang Zhen-Jie (汤振杰), Li Rong (李荣), Yin Jiang (殷江) |
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Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer |
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Chin. Phys. B
2013 Vol.22 (9): 97701-097701
[Abstract]
(784)
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[PDF 379 KB]
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78501 |
Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚) |
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Lead zirconate titanate behaviors in LDMOS |
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Chin. Phys. B
2013 Vol.22 (7): 78501-078501
[Abstract]
(520)
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[PDF 439 KB]
(478)
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77308 |
Wang Ying (王颖), Yang Ting (杨汀), Xie Ji-Peng (谢吉鹏), Lü Wen-Li (吕文理), Fan Guo-Ying (范国莹), Liu Su (刘肃) |
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Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application |
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Chin. Phys. B
2013 Vol.22 (7): 77308-077308
[Abstract]
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[PDF 644 KB]
(679)
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38401 |
Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华) |
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Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory |
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Chin. Phys. B
2013 Vol.22 (3): 38401-038401
[Abstract]
(838)
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[PDF 273 KB]
(1205)
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37201 |
Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) |
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Analysis of resistive switching behaviors of vanadium oxide thin film |
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Chin. Phys. B
2013 Vol.22 (3): 37201-037201
[Abstract]
(831)
[HTML 0 KB]
[PDF 689 KB]
(1421)
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18501 |
Jin Lin (金林), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Wang Yong (王永), Yu Zhao-An (余兆安), Jiang Dan-Dan (姜丹丹), Chen Jun-Ning (陈军宁), Liu Ming (刘明) |
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A simple and accurate method to measure program/erase speed in a memory capacitor structure |
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Chin. Phys. B
2013 Vol.22 (1): 18501-018501
[Abstract]
(913)
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[PDF 472 KB]
(704)
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98401 |
Du Xiao-Feng (杜小锋), Song San-Nian (宋三年), Song Zhi-Tang (宋志棠), Liu Wei-Li (刘卫丽), Lü Shi-Long (吕士龙), Gu Yi-Feng (顾怡峰), Xue Wei-Jia (薛维佳), Xi Wei (席韡) |
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Scaling properties of phase-change line memory |
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Chin. Phys. B
2012 Vol.21 (9): 98401-098401
[Abstract]
(1080)
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[PDF 4733 KB]
(1173)
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78501 |
Peng Ya-Hua(彭雅华), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Liu Fei(刘飞), Jin Rui(金锐), and Kang Jin-Feng(康晋锋) |
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The influence of thermally assisted tunneling on the performance of charge trapping memory |
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Chin. Phys. B
2012 Vol.21 (7): 78501-078501
[Abstract]
(1418)
[HTML 1 KB]
[PDF 303 KB]
(924)
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57105 |
Tan Chang-Long(谭昌龙), Tian Xiao-Hua (田晓华), and Cai Wei(蔡伟) |
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The effect of Fe on the martensitic transformation of TaRu high-temperature shape memory alloys:A first-principles study |
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Chin. Phys. B
2012 Vol.21 (5): 57105-057105
[Abstract]
(1510)
[HTML 1 KB]
[PDF 201 KB]
(573)
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54209 |
Zhang Xiao-Hang(张晓航), Bao Qian-Qian(鲍倩倩), Zhang Yan(张岩), Su Ming-Che(苏铭彻), Cui Cui-Li(崔淬砺), and Wu Jin-Hui(吴金辉) |
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Dynamic control of retrieval contrast in a $\Lambda$-type atomic system |
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Chin. Phys. B
2012 Vol.21 (5): 54209-054209
[Abstract]
(1287)
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[PDF 228 KB]
(627)
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29401 |
Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) |
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Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells |
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Chin. Phys. B
2012 Vol.21 (2): 29401-029401
[Abstract]
(1112)
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[PDF 1424 KB]
(1008)
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10308 |
Xue Peng(薛鹏) and Wu Jian-Zhi(午剑智) |
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High-fidelity quantum memory realized via Wigner crystals of polar molecules |
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Chin. Phys. B
2012 Vol.21 (1): 10308-010308
[Abstract]
(1255)
[HTML 1 KB]
[PDF 387 KB]
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97703 |
Xing Zhong-Wen(邢钟文), X. Chen, N. J. Wu, and A. Ignatiev |
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Bipolar resistive switching in Cr-doped TiOx thin films |
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Chin. Phys. B
2011 Vol.20 (9): 97703-097703
[Abstract]
(1426)
[HTML 1 KB]
[PDF 504 KB]
(836)
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68501 |
Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华) |
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First principles simulation technique for characterizing single event effects |
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Chin. Phys. B
2011 Vol.20 (6): 68501-068501
[Abstract]
(1291)
[HTML 1 KB]
[PDF 3188 KB]
(1698)
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47503 |
Tian Xiao-Hua(田晓华), Sui Jie-He(隋解和), Zhang Xin(张欣), Feng Xue(冯雪), and Cai Wei(蔡伟) |
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Microstructural, phase transformation and magnetic properties of Ni–Mn–Ga alloy fabricated by spark plasma sintering |
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Chin. Phys. B
2011 Vol.20 (4): 47503-047503
[Abstract]
(1358)
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[PDF 2280 KB]
(922)
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46102 |
Shen Hua-Hai(申华海), Yu Hua-Jun(余华军), Fu Hao(付浩), Guo Yuan-Jun(郭袁俊), Fu Yong-Qing(傅永庆), and Zu Xiao-Tao(祖小涛) |
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The effect of Si content on the martensitic transfor-mation temperature of Ni55.5e18Ga26.5–xSix alloys |
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Chin. Phys. B
2011 Vol.20 (4): 46102-046102
[Abstract]
(1323)
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[PDF 2860 KB]
(874)
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28104 |
Li Pan-Pan(李盼盼), Wang Jing-Min(王敬民), and Jiang Cheng-Bao(蒋成保) |
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Martensitic transformation in Cu-doped NiMnGa magnetic shape memory alloys |
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Chin. Phys. B
2011 Vol.20 (2): 28104-028104
[Abstract]
(1309)
[HTML 1 KB]
[PDF 243 KB]
(754)
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17305 |
Li Ying-Tao(李颖弢), Long Shi-Bing(龙世兵), Lü Hang-Bing(吕杭炳), Liu Qi(刘琦), Wang Qin(王琴), Wang Yan(王艳), Zhang Sen(张森), Lian Wen-Tai(连文泰), Liu Su(刘肃), and Liu Ming(刘明) |
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Investigation of resistive switching behaviours in WO3-based RRAM devices |
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Chin. Phys. B
2011 Vol.20 (1): 17305-017305
[Abstract]
(1598)
[HTML 1 KB]
[PDF 2008 KB]
(1548)
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97105 |
Zhang Kai-Cheng(张开成) and Song Peng-Yun(宋朋云) |
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Spin glass dynamics in RKKY interacting disordered magnetic system |
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Chin. Phys. B
2010 Vol.19 (9): 97105-097105
[Abstract]
(1498)
[HTML 1 KB]
[PDF 148 KB]
(643)
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74210 |
Yuan Sui-Hong(袁绥洪) and Hu Xiang-Ming(胡响明) |
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Einstein－Podolsky－Rosen entanglement in bad cavity case |
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Chin. Phys. B
2010 Vol.19 (7): 74210-074210
[Abstract]
(1350)
[HTML 1 KB]
[PDF 120 KB]
(666)
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57204 |
Liu Xing-Hua(刘兴华), Lu Wen-Sheng(鲁闻生), Ji Zhuo-Yu(姬濯宇), Tu De-Yu(涂德钰),Zhu Xiao-Li(朱效立), Xie Chang-Qing(谢常青), and Liu Ming(刘明) |
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Fabrication of a 256-bits organic memory by soft x-ray lithography |
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Chin. Phys. B
2010 Vol.19 (5): 57204-057204
[Abstract]
(1215)
[HTML 1 KB]
[PDF 4086 KB]
(771)
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38701 |
Shi Xiao-Ming(石晓明), Shi Lun(施伦), and Zhang Jie-Fang(张解放) |
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Opinion evolution based on cellular automata rules in small world networks |
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Chin. Phys. B
2010 Vol.19 (3): 38701-038701
[Abstract]
(1776)
[HTML 1 KB]
[PDF 2434 KB]
(510)
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37304 |
Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏) |
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Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches |
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Chin. Phys. B
2010 Vol.19 (3): 37304-037304
[Abstract]
(1916)
[HTML 1 KB]
[PDF 707 KB]
(2083)
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37101 |
Tan Chang-Long(谭昌龙), Cai Wei(蔡伟), and Tian Xiao-Hua(田晓华) |
| |
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Combined experimental and theoretical study on the effect of Nb content on martensitic transformation of NbRu shape memory alloys |
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Chin. Phys. B
2010 Vol.19 (3): 37101-037101
[Abstract]
(1656)
[HTML 1 KB]
[PDF 237 KB]
(657)
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108701 |
Zhao De-Jiang(赵德江), Zeng Shang-You(曾上游), and Zhang Zheng-Zhen(张争珍) |
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Effects of fractal gating of potassium channels on neuronal behaviours |
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Chin. Phys. B
2010 Vol.19 (10): 108701-108701
[Abstract]
(1120)
[HTML 1 KB]
[PDF 198 KB]
(533)
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108102 |
Wang Li(王利), Sun Hong-Fang(孙红芳), Zhou Hui-Hua(周惠华), and Zhu Jing(朱静) |
| |
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Preparation of size controllable copper nanocrystals for nonvolatile memory applications |
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Chin. Phys. B
2010 Vol.19 (10): 108102-108102
[Abstract]
(1419)
[HTML 0 KB]
[PDF 3061 KB]
(599)
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107102 |
Tan Chang-Long(谭昌龙), Jiang Jiu-Xing(姜久兴), Tian Xiao-Hua(田晓华), and Cai Wei(蔡伟) |
| |
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Effect of Co on magnetic property and phase stability of Ni–Mn–Ga ferromagnetic shape memory alloys: A first-principles study |
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Chin. Phys. B
2010 Vol.19 (10): 107102-107102
[Abstract]
(1415)
[HTML 1 KB]
[PDF 248 KB]
(833)
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100508 |
Tang Gang(唐刚), Hao Da-Peng(郝大鹏), Xia Hui(夏辉), Han Kui(韩奎), and Xun Zhi-Peng(寻之朋) |
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Effects of memory on scaling behaviour of Kardar–Parisi–Zhang equation |
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Chin. Phys. B
2010 Vol.19 (10): 100508-100508
[Abstract]
(1361)
[HTML 0 KB]
[PDF 305 KB]
(662)
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3031 |
Meng Fan-Bin(孟凡斌), Guo Hong-Jun(郭红俊), Liu Guo-Dong(刘国栋), Liu He-Yan(刘何燕), Dai Xue-Fang(代学芳), Luo Hong-Zhi(罗鸿志), Li Yang-Xian(李养贤), Chen Jing-Lan(陈京兰), and Wu Guang-Heng(吴光恒) |
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Successive phase transformation in ferromagnetic shape memory alloys Co37Ni34Al39 melt-spun ribbons |
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Chin. Phys. B
2009 Vol.18 (7): 3031-3034
[Abstract]
(1420)
[HTML 1 KB]
[PDF 502 KB]
(617)
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744 |
Xu Guo-Liang(徐国亮), Chen Jing-Dong(陈敬东), Chen Dong(陈东), Ma Jian-Zhong(马建忠), Yu Ben-Hai(余本海), and Shi De-Heng(施德恒) |
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First-principles calculation of elastic and thermodynamic properties of Ni2MnGa Heusler alloy |
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Chin. Phys. B
2009 Vol.18 (2): 744-748
[Abstract]
(1384)
[HTML 1 KB]
[PDF 636 KB]
(818)
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4571 |
Gao Jie(高洁), Jiang Li-Li(蒋丽丽), and Xu Zhen-Yuan(徐振源) |
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Chaos game representation walk model for the protein sequences |
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Chin. Phys. B
2009 Vol.18 (10): 4571-4579
[Abstract]
(1703)
[HTML 1 KB]
[PDF 230 KB]
(718)
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370 |
Gao Jie(高洁) and Xu Zhen-Yuan(徐振源) |
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Chaos game representation (CGR)-walk model for DNA sequences |
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Chin. Phys. B
2009 Vol.18 (1): 370-376
[Abstract]
(1087)
[HTML 1 KB]
[PDF 517 KB]
(977)
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2678 |
Song Yun-Cheng(宋云成), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦) |
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Carriers recombination processes in charge trapping memory cell by simulation |
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Chin. Phys. B
2008 Vol.17 (7): 2678-2682
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(1749)
[HTML 1 KB]
[PDF 463 KB]
(478)
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1070 |
Li Xue-Lin(李学林), Feng Shun-Shan(冯顺山), and Chen Guo-Guang(陈国光) |
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Formation of high density TiN nanocrystals and its application in non-volatile memories |
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Chin. Phys. B
2008 Vol.17 (3): 1070-1077
[Abstract]
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[HTML 1 KB]
[PDF 892 KB]
(685)
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2475 |
Zhang Ting(张挺), Song Zhi-Tang(宋志棠), Liu Bo(刘波), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), and Chen Bomy(陈邦明) |
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Si1Sb2Te3 phase change material for chalcogenide random access memory |
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Chin. Phys. B
2007 Vol.16 (8): 2475-2478
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[HTML 1 KB]
[PDF 180 KB]
(486)
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1783 |
Zhang Qi-Cheng(张启程), Ni Yi(倪屹), Xu Duan-Yi(徐端颐), and Hu Heng(胡恒) |
| |
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Restriction of shot noise and material noise in a multilevel photochromic memory on signal-to-noise ratio |
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Chin. Phys. B
2006 Vol.15 (8): 1783-1787
[Abstract]
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[HTML 0 KB]
[PDF 329 KB]
(410)
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1167 |
Liu Bo (刘波), Song Zhi-Tang (宋志棠), Zhang Ting (张挺), Feng Song-Lin (封松林), Gan Fu-Xi (干福熹) |
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Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor |
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Chin. Phys. B
2004 Vol.13 (7): 1167-1170
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[HTML 1 KB]
[PDF 180 KB]
(317)
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413 |
Feng Guo-Lin (封国林), Dong Wen-Jie (董文杰), Jia Xiao-Jing (贾晓静) |
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Application of retrospective time integration scheme to the prediction of torrential rain |
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Chin. Phys. B
2004 Vol.13 (3): 413-422
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[PDF 448 KB]
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