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Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation |
1. Key Laboratory of Low Dimensional Materials and Application Technology of the Ministry of Education, Xiangtan University
2. 湘潭大学低维材料与应用技术国家重点实验室
3. Northwest Institute of Nuclear Technology
4. Northwest Institute of Nuclear Technology
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6. Brookhaven National Laboratory
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Abstract The single event effect in ferroelectric-gate FET (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in FeFET than in conventional MOSFET. The main reason is that the polarization induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which contributes to reduce the collection charge and bipolar amplification. The simulation results are expected to explain that the FeFET has a good immunity to single event effect.
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Received: 04 June 2013
Published: 31 October 2013
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| Fund: ;the Science Foundation of Ningde Normal University;the National Natural Science Foundation of China (Grant No. 60877040);Soft Science and Technology Program of Guizhou Province;Natural Science and Technology Foundation of Guizhou Province;Governor Foundation of Guizhou Province;Doctoral Foundation of Guizhou University of Finance and Economics;the NSFC under Grant No.11074028;Doctoral Program Foundation of the Ministry of Education China;the Key Program of the Education Department of Anhui Province |
Cite this article:
Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation Chin. Phys. B 0
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