CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
Prev
Next
|
|
|
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin |
Qiwen Zheng(郑齐文)1,2, Jiangwei Cui(崔江维)1,2, Mengxin Liu(刘梦新)4, Dandan Su(苏丹丹)1,2,3, Hang Zhou(周航)1,2,3, Teng Ma(马腾)1,2,3, Xuefeng Yu(余学峰)1,2, Wu Lu(陆妩)1,2, Qi Guo(郭旗)1,2, Fazhan Zhao(赵发展)4 |
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; 2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; 3 University of Chinese Academy of Sciences, Beijing 100049, China; 4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China |
|
|
Abstract In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (Vdd) reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vdd should be tested, because Vdd of SRAM cell under data retention mode is lower than normal Vdd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.
|
Received: 28 April 2017
Revised: 12 June 2017
Accepted manuscript online:
|
PACS:
|
61.80.Ed
|
(γ-ray effects)
|
|
61.82.Fk
|
(Semiconductors)
|
|
85.30.Tv
|
(Field effect devices)
|
|
07.85.-m
|
(X- and γ-ray instruments)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 11605282) and the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences Research Projects (Grant No. KLSDTJJ2016-07). |
Corresponding Authors:
Fazhan Zhao
E-mail: qiwinzheng@163.com,qwzheng@ms.xjb.ac.cn
|
Cite this article:
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 2017 Chin. Phys. B 26 096103
|
[1] |
Seevinck E, List F J and Lohstroh J 1987 IEEE J. Solid-St. Circ. 22 748
|
[2] |
Oldham T R and McLean F B 2003 IEEE T. Nucl. Sci. 50 483
|
[3] |
Campbell A B and Stapor W J 1984 IEEE T. Nucl. Sci. 31 1175
|
[4] |
Schott J T and Zugich M H 1987 IEEE T. Nucl. Sci. 34 1404
|
[5] |
Bhuva B L, Johnson R L, Gyurcsik R S, Fernald K W, Kerns S E, Stapor W J, Campbell A B and Xapsos M A 1987 IEEE T. Nucl. Sci. 34 1414
|
[6] |
Axness C L, Schwank J R, Winokur P S, Browwning J S, Koga R and Fleetwood D M 1988 IEEE T. Nucl. Sci. 35 1602
|
[7] |
Stassinopoulos E G, Brucker G J, Gunten O V and Kim H S 1989 IEEE T. Nucl. Sci. 36 2330
|
[8] |
Matsukawa T, Kishida A, Tanii T, Koh M, Horita K, Hara K, Shigeta B, Goto M, Matsuda S, Kuboyama S and Ohdomari I 1994 IEEE T. Nucl. Sci. 41 2071
|
[9] |
Xiaoyin Y, Nathan H, Lawrence T C, Keith E H, David R A and Walter M S 2008 IEEE T. Nucl. Sci. 55 3280
|
[10] |
Ding L L, Yao Z B, Guo H X, Chen W and Fan R Y 2012 J. Semeicond. 33 075010
|
[11] |
Zheng Q W, Yu X F, Cui J W, Guo Q, Ren D Y, Cong Z C and Zhou H 2014 Chin. Phys. B 23 106102
|
[12] |
Zheng Q W, Cui J W, Zhou H, Yu D Z, Yu X F, Lu W, Guo Q and Ren D Y 2015 Chin. Phys. B 24 106106
|
[13] |
King M P, Wu X, Eller M, Samavedam S, Shaneyfelt M R, Silva A I, Draper B L, Rice W C, Meisenheimer T L, Felix J A, Shetler K J, Zhang E X, Haeffner T D, Ball D R, Alles M L, Kauppila J S and Massengill L W 2017 IEEE T. Nucl. Sci. 64 285
|
[14] |
Federico F and Giovanni C 2005 IEEE T. Nucl. Sci. 52 2413
|
[15] |
Zhiyuan H, Zhangli L, Hua S, Zhengxuan Z, Bingxu N, Ming C, Dawei B and Shichang Z 2011 IEEE T. Nucl. Sci. 58 1347
|
[16] |
Rabaey J M, Chandrakasan A and Nikolic B 2003 Digital Integrated Circuits-A Design Perspective (Upper Saddle River: Prentice-Hall) p. 134
|
[17] |
Ma T P and Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Devices and Circuits (New York: John Wiley and Sons) pp. 256-333
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|