Abstract Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest. In this paper, the SPICE model of Sr0.95Ba0.05TiO3 (SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4×4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8×8 crossbar multi-value memory circuits to the images memory.
(Superconducting logic elements and memory devices; microelectronic circuits)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61703246 and 61703247), the Qingdao Science and Technology Plan Project (Grant No. 19-6-2-2-cg), and the Elite Project of Shandong University of Science and Technology.
Corresponding Authors:
Gang Dou
E-mail: dougang521@sdust.edu.cn
Cite this article:
Mei Guo(郭梅), Ren-Yuan Liu(刘任远), Ming-Long Dou(窦明龙), and Gang Dou(窦刚) SBT-memristor-based crossbar memory circuit 2021 Chin. Phys. B 30 068402
[1] Yu S M and Chen P Y 2016 IEEE Solid State Circ. Mag.8 43 [2] Yakopcic C, Taha T M, Subramanyam G, Pino R E and Rogers S 2011 Proceedings of the International Joint Conference on Neural Networks, July 31-August 5, 2011 California, USA, p. 3243 [3] Chua L O 1971 IEEE Trans. Circ. Theory18 507 [4] Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature453 80 [5] Das M, Kumar A, Kumar S, Mandal B, Siddharth G, Kumar P, Htay M T and Mukherjee S 2020 IEEE Trans. Nanotechnol.19 332 [6] Kumar S, Strachan J P and Williams R S 2017 Nature548 318 [7] Cheng P F, Sun K and Hu Y H 2016 Nano Lett.16 572 [8] Miao F, Yi W, Goldfarb I, Yang J J, Zhang M X, Pickett M D, Strachan J P, Medeiros R G and Williams R S 2012 ACS Nano6 2312 [9] Wang Z W, Yin M H, Zhang T, Cai Y M, Wang Y Y, Yang Y C and Huang R 2016 Nanoscale8 14015 [10] Nandakumar S R, Minvielle M, Nagar S, Dubourdieu C and Rajendran B 2016 Nano Lett.16 1602 [11] Li C L, Li Z Y, Feng W, Tong Y N, Du J R and Wei D Q 2019 AEU Int. J. Electron. Commun.110 152861 [12] Li H M, Yang Y F, Li W, He S B and Li C L 2020 Eur. Phys. J. Plus135 579 [13] Liu H J, Chen C L, Zhu X, Sun S Y, Li Q J and Li Z W 2020 Chin. Phys. B29 028502 [14] Liu Y C, Lin Y, Wang Z Q and Xu H Y 2019 Acta Phys. Sin.68 168504 (in Chinese) [15] Hong Q H, Yan R A, Wang C H and Sun J R 2020 IEEE Trans. Biomed. Circuits Syst.14 1036 [16] Hong Q H, Shi Z R, Sun J R and Du S C 2021 Neural Comput. Appl.33 4901 [17] Wang Z R, Joshi S, Savelev, S E, Jiang H, Midya R, Lin P, Hu M, Ge N, Strachan J P, Li Z Y, Wu Q, Barnell M, Li G L, Xin H L, Williams R S, Xia Q F and Yang J J 2017 Nat. Mater.16 101 [18] Soudry D, Castro D D, Gal A, Kolodny A and Kvatinsky S 2017 IEEE Trans. Neural Networks Learn. Sys.26 2408 [19] Di V M, Pershin Y V and Chua L O 2009 Proc. IEEE97 1717 [20] Mozaffari S N, Tragoudas S and Haniotakis T 2017 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.36 1018 [21] Zhu X, Yang X J, Wu C Q, Xiao N, Wu J J and Yi X 2013 IEEE Trans. Circuits Syst. Express Briefs60 682 [22] Zhou Z Y, Zhao J H, Chen A P, Pei Y F, Xiao Z A, Wang G, Chen J S, Fu G S and Yan X B 2020 Mater. Horizons7 1106 [23] Dongale T D, Patil K P, Mullani S B, More K V, Delekar S D, Patil P S, Gaikwad P K and Kamat R K 2015 Mater. Sci. Semicond. Process.35 174 [24] Chen C Y, Shih H C, Wu C W, Lin C H, Chiu P F, Sheu S S and Chen F T 2015 IEEE Trans. Comput.64 180 [25] Shim W, Luo Y D, Seo J S and Yu S M 2020 IEEE Trans. Electron Dev.67 2318 [26] Alfaro R D, Sassine G, Rafhay Q, Ghibaudo G, Molas G and Nowak E 2019 IEEE Trans. Electron Dev.66 3318 [27] Yin S H, Sun X Y, Yu S M and Seo J S 2020 IEEE Trans. Electron Dev.67 4185 [28] Jin F Y, Chang K C, Chang T C, Tsai T M, Pan C H, Lin C Y, Chen P H, Chen M C, Huang H C, Lo I, Zheng J C and Sze S M 2016 Appl. Phys. Express9 061501 [29] Patel K, Cottom J, Bosman M, Kenyon A J and Shluger A L 2019 Microelectron. Reliab.98 144 [30] Baek I J and Cho W J 2017 J. Nanosci. Nanotechnol.17 3065 [31] Chen F T, Lee H Y, Chen Y S, Hsu Y Y, Zhang L J, Chen P S, Chen W S, Gu P Y, Liu W H, Wang S M, Tsai C H, Sheu S S, Tsai M J and Huang R 2011 Sci. China Inf. Sci.54 1073 [32] Raghavan N, Frey D D, Bosman M and Pey K L 2015 Microelectron. Reliab.55 1422 [33] Mehonic A, Gerard T and Kenyon A J 2017 Appl. Phys. Lett.111 233502 [34] Zidan M A, Fahmy H A H, Hussain M M and Salama K N 2013 Microelectron. J.44 176 [35] Krestinskaya O, Ibrayev T and James A P 2018 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.37 1143 [36] Shaarawy N, Emara A, El-Naggar A M, Elbtity M E, Ghoneima M and Radwan A G 2018 Microelectron. J.73 75 [37] Dubey S K and Islam A 2020 Microsyst. Technol.26 1325 [38] Rabbani P, Dehghani R and Shahpari N 2015 Microelectron. J.46 1283 [39] Zhang Y M, Dou G, Sun Z, Guo M and Li Y X 2017 Int. J. Bifurc. Chaos27 1750148 [40] Dou G, Yu Y, Guo M, Zhang Y M, Sun Z and Li Y X 2017 Chin. Phys. Lett.34 038502 [41] Sharif K F, Islam R, Biswas S N and Groza V 2017 Proceedings of IEEE Symposium on Computer Applications &$ Industrial Electronics, April 24-25, 2017, Langkawi, Malaysia, p. 37
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