Investigation of resistive switching behaviours in WO3-based RRAM devices

doi:10.1088/1674-1056/20/1/017305

Abstract In this paper, a WO₃-based resistive random access memory device composed of a thin film of WO₃ sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO₃/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Keywords: resistive random access memory resistive switching nonvolatile WO₃

Received: 13 July 2010
Revised: 02 August 2010
Accepted manuscript online:

PACS:	73.40.Rw	(Metal-insulator-metal structures)
	73.50.-h	(Electronic transport phenomena in thin films)
	72.80.Sk	(Insulators)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2008CB925002 and 2010CB934200), the National Natural Science Foundation of China (Grant Nos. 60825403 and 50972160) and the National High Technology Research and Development Program of China (Grant No. 2009AA03Z306).

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Li Ying-Tao(李颖弢), Long Shi-Bing(龙世兵), Lü Hang-Bing(吕杭炳), Liu Qi(刘琦), Wang Qin(王琴), Wang Yan(王艳), Zhang Sen(张森), Lian Wen-Tai(连文泰), Liu Su(刘肃), and Liu Ming(刘明) Investigation of resistive switching behaviours in WO₃-based RRAM devices 2011 Chin. Phys. B 20 017305

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Investigation of resistive switching behaviours in WO3-based RRAM devices

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Investigation of resistive switching behaviours in WO₃-based RRAM devices