School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic, Communication Devices, Tianjin University of Technology, Tianjin, China
The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory (TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state (LRS) and Schottky emission in the high resistive state (HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.
Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700).
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer 2018 Chin. Phys. B 27 087701
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