CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer |
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) |
School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic, Communication Devices, Tianjin University of Technology, Tianjin, China |
|
|
Abstract The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory (TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state (LRS) and Schottky emission in the high resistive state (HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.
|
Received: 24 April 2018
Revised: 30 May 2018
Accepted manuscript online:
|
PACS:
|
77.55.hf
|
(ZnO)
|
|
85.35.-p
|
(Nanoelectronic devices)
|
|
85.30.-z
|
(Semiconductor devices)
|
|
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700). |
Corresponding Authors:
Fang Wang, Kai-Liang Zhang
E-mail: fwang75@163.com;kailiang_zhang@163.com
|
Cite this article:
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer 2018 Chin. Phys. B 27 087701
|
[1] |
Lei X Y, Liu H X, Gao H X, Yang H N, Wang G M, Long S B, Ma X H and Liu M 2008 Appl. Phys. Lett. 93 223505
|
[2] |
Jiang R, Du X H, Han Y Z and Sun W D 2015 Acta Phys. Sin. 64 207302 (in Chinese)
|
[3] |
Seo M S, Park J W, Lim K S, Yang J H and Kang S J 2008 Appl. Phys. Lett. 93 223505
|
[4] |
Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W and Chen D M 2014 Jpn. J. Appl. Phys. 53 075801
|
[5] |
Yang P J, Jou S and Chiu C C 2014 Jpn. J. Appl. Phys. 53 075801
|
[6] |
Chen K H, Chang K C, Chang T C Chang T C, Tsai T M, Liang S P, Young T F, Syu Y E and Sze S M 2016 Nanoscale Res. Lett. 11 224
|
[7] |
Ye C, Wu J J, Pan C H, Tsai T M, Chang K C, Wu H Q, Deng Ni and Qian H 2017 RSC Adv. 7 11585
|
[8] |
Ho C H, Duran R, Jose R, Yang P K, Lee C P, Tsai, M L, Kang C F and He J H 2017 Sci. Rep. 7 44429
|
[9] |
Zhu J X, Zhou W L, Wang Z Q, Xu H Y, Lin Y, Liu W Z, Ma J G and Liu Y C 2017 RSC Adv. 7 32114
|
[10] |
Ma H L, Wang Z Q, Xu H Y, Zhang L, Zhao X N, Han S M, Ma J G and Liu Y C 2016 Chin. Phys. B 25 127303
|
[11] |
Kim K Y, Shim E L and Choi Y J 2016 J. Nanosci. Nanotechnol. 16 10303
|
[12] |
Pang H and Deng N 2014 Chin. Phys. Lett. 31 107303
|
[13] |
Jiang R, Han Z Y and Du X H 2016 Microelectronics Reliability 63 37
|
[14] |
Zhang K L, Sun K, Wang F, Han Y M, Jiang Z Z, Zhao J S, Wang B L, Zhang H Z, Jian X C and Wong H S P 2015 IEEE Electron Dev. Lett. 36 1018
|
[15] |
Jiang R, Wu Z R, Han Z Y and Jung H S 2016 Chin. Phys. B 25 106803
|
[16] |
Lai Y F, Chen F, Zeng Z C, Lin P J, Shu Y and Yu J L 2016 Appl. Phys. Lett. 109 063501
|
[17] |
Su S, Jian X C, Wang F, Han Y M, Tian Y X and Wang X Y 2016 Chin. Phys. B 25 107302
|
[18] |
Chen B, Lu Y, Gao B, Fu Y H, Zhang F F, Huang P, Chen Y S, Liu L F, Liu X Y, Kang J F, Wang Y Y, Fang Z, Yu H Y, Li X, Wang X P, Singh N, Lo G Q and Kwong D L 2011 International Electron Devices Meeting 11 283
|
[19] |
Lai Y F, Zeng Z C, Liao C H, Cheng S Y, Yu J L, Zheng Q and Lin P J 2016 Appl. Phys. Lett. 109 063501
|
[20] |
Wei C C, Wang H, Xu J W, Zhang X W, Yang L and Chen Q S 2015 Nanoscale 7 11063
|
[21] |
Shao X L, Zhou L W, Yoon K J, Jiang H, Zhao J S, Zhang K L, Yoo S and Hwang C S 2015 Nanoscale 7 11063
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|