Preparation of size controllable copper nanocrystals for nonvolatile memory applications

doi:10.1088/1674-1056/19/10/108102

Abstract A method of fabricating Cu nanocrystals embedded in SiO₂ dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.

Keywords: nanocrystal grain nonvolatile memory Coulomb blockade effect magnetron sputtering

Received: 23 February 2010
Revised: 19 May 2010
Accepted manuscript online:

PACS:	61.46.Hk	(Nanocrystals)
	77.55.+f
	81.15.Cd	(Deposition by sputtering)
	81.16.-c	(Methods of micro- and nanofabrication and processing)
	84.30.Sk	(Pulse and digital circuits)

Cite this article:

Wang Li(王利), Sun Hong-Fang(孙红芳), Zhou Hui-Hua(周惠华), and Zhu Jing(朱静) Preparation of size controllable copper nanocrystals for nonvolatile memory applications 2010 Chin. Phys. B 19 108102

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Preparation of size controllable copper nanocrystals for nonvolatile memory applications

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