Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(3): 037201    DOI: 10.1088/1674-1056/22/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analysis of resistive switching behaviors of vanadium oxide thin film

Wei Xiao-Ying (韦晓莹)a, Hu Ming (胡明)a, Zhang Kai-Liang (张楷亮)b, Wang Fang (王芳)b, Zhao Jin-Shi (赵金石)b, Miao Yin-Ping (苗银萍)b
a School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;
b School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology, Tianjin 300384, China
Abstract  We demonstrated the polarization of resistive switching for Cu/VOx/Cu memory cell. Switching behaviors of Cu/VOx/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I–V characteristics of VOx/Cu was characterized by conductive atomic force microscope (CAFM). The I–V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VOx/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.
Keywords:  VOx thin films      reversible resistive switching      resistive random access memory (RRAM)      conductive atomic force microscope  
Received:  07 July 2012      Revised:  21 August 2012      Accepted manuscript online: 
PACS:  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
  68.35.bg (Semiconductors)  
  71.30.+h (Metal-insulator transitions and other electronic transitions)  
  73.40.Sx (Metal-semiconductor-metal structures)  
Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055, 61274113, and 11204212), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029), and Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700).
Corresponding Authors:  Zhang Kai-Liang     E-mail:  kailiang_zhang@163.com

Cite this article: 

Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) Analysis of resistive switching behaviors of vanadium oxide thin film 2013 Chin. Phys. B 22 037201

[1] Wang Y Z, Chen Y T, Xue F, Zhou F, Chang Y F, Fowler B and Lee J C 2012 Appl. Phys. Lett. 100 083502
[2] Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W and Chen D M 2010 Chin. Phys. B 19 037304
[3] Wen X Z, Chen X, Wu N J and Ignatiev A 2011 Chin. Phys. B 20 097703
[4] Li Y T, Long S B, Liu Q, Wang Q, Zhang M H, Lü H B, Shao L B, Wang Y, Zhang S, Zuo Q Y, Liu S and Liu M 2010 Phys. Stat. Sol. (RRL) 4 124
[5] Wang H J, Zou C W, Zhou L, Tian C X, Lee M K and Lee J C 2011 Phys. Stat. Sol. (RRL) 5 223
[6] Wu M C, Wu T H and Tseng T Y 2012 J. Appl. Phys. 111 014505
[7] Guan W H, Long S B, Liu Q, Liu M and Wang W 2008 IEEE Electron Dev. Lett. 29 434
[8] Huang H H, Shih W C and Lai C H 2010 Appl. Phys. Lett. 96 193505
[9] Tran X A, Zhu W G, Gao B, Kang J F, Liu W J, Fang Z, Wang Z R, Yeo Y C, Nguyen B Y, Li M F and Yu H Y 2012 IEEE Electron Dev. Lett. 33 4
[10] Chen C, Pan F, Wang Z S, Yang J and Zeng F 2012 J. Appl. Phys. 111 013702
[11] Yu S M, Jeyasingh R, Wu Y and Wong P H S 2012 Phys. Rev. B 85 045324
[12] Heckman E M, Gonzalez L P, Guh S, Barnes J O and Amelia C 2009 Thin Solid Films. 518 1
[13] Liang J R, Hu M, Kan Q, Liang X Q, Wang X D, Li G K and Chen H D 2011 Rare Metals 30 247
[14] Dejene F B and Ocaya R O 2010 Curr. Appl. Phys. 10 508
[15] Kang M, Kim I, Kim S W, Ryu J W and Park H Y 2011 Appl. Phys. Lett. 98 131907
[16] Liu X H, Zhang Y F, Yi S P, Huang C, Liao J, Li H B, Xiao D and Tao H Y 2011 J. Supercritical Fluids 56 194
[17] Radu I P, Martens K, Mertens S, Adelmann C, Shi X, Tielens H, Schaekers M, Pourtois G, Elshocht S V, Gendt S D, Heyns M and Kittl J A 2011 ECS Trans. 35 233
[18] Son M W, Liu X J, Sadaf S M, Lee D, Park S, Lee W, Kim S, Park J, Shin J, Jung S J, Ham M H and Hwang H 2012 IEEE Electron Dev. Lett. 33 5
[19] Kim D C, Seo S, Ahn S E and Suh DS 2006 Appl. Phys. Lett. 88 202102
[1] Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲). Chin. Phys. B, 2017, 26(8): 087305.
[2] Thermal effect on endurance performance of 3-dimensional RRAM crossbar array
Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明). Chin. Phys. B, 2016, 25(5): 056501.
[3] Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮). Chin. Phys. B, 2016, 25(10): 107302.
[4] Resistive switching characteristics of Ti/ZrO2/Pt RRAM device
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明). Chin. Phys. B, 2014, 23(11): 117305.
No Suggested Reading articles found!