Analysis of resistive switching behaviors of vanadium oxide thin film

doi:10.1088/1674-1056/22/3/037201

Abstract We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I–V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I–V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.

Keywords: VO_x thin films reversible resistive switching resistive random access memory (RRAM) conductive atomic force microscope

Received: 07 July 2012
Revised: 21 August 2012
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	68.35.bg	(Semiconductors)
	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	73.40.Sx	(Metal-semiconductor-metal structures)

Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055, 61274113, and 11204212), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029), and Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700).

Corresponding Authors: Zhang Kai-Liang
E-mail: kailiang_zhang@163.com

Cite this article:

Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) Analysis of resistive switching behaviors of vanadium oxide thin film 2013 Chin. Phys. B 22 037201

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