Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

doi:10.1088/1674-1056/23/11/117305

Abstract

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO₂/Pt resistive switching memory devices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduction and the trap-controlled space charge limited current (SCLC) mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied: the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

Keywords: resistive random access memory (RRAM) resistive switching (RS) conductive filament (CF) compliance current

Received: 25 March 2014
Revised: 30 May 2014
Accepted manuscript online:

PACS:	73.40.Rw	(Metal-insulator-metal structures)
	77.80.Fm	(Switching phenomena)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61106106, 11304237, 61376099, and 11235008), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20130203130002 and 20110203110012).

Corresponding Authors: Liu Hong-Xia
E-mail: hxliu@mail.xidian.edu.cn

Cite this article:

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device 2014 Chin. Phys. B 23 117305

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Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device